Sony CXK5V8257BYM, CXK5V8257BTM, CXK5V8257BM-70LL, CXK5V8257BM-10LL Datasheet
CXK5V8257BTM/BYM/BM -70LL/10LL
For the availability of this product, please contact the sales office.
32768-word × 8-bit High Speed CMOS Static RAM
Description
The CXK5V8257BTM/BYM/BM is 262,144 bits
high speed CMOS static RAM organized as 32768words by 8 bits.
A polysilicon TFT cell technology realized extermely
low stand-by current and higher data retention stability.
Operating on a single 3.3V supply, directly LVTTL
compatible (All inputs and outputs).
And special feature are, low power consumption,
high speed and broad package line-up.
The CXK5V8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
Features
• Single +3.3V supply: 3.3V ±0.3V
• Directly LVTTL compatible: All inputs and outputs
• Fast access time: (Access time)
CXK5V8257BTM/BYM/BM
-70LL 70ns (Max.)
-10LL 100ns (Max.)
• Low standby current:
CXK5V8257BTM/BYM/BM
-70LL/10LL 3.5µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin
TSOP Package
CXK5V8257BM 450mil 28 pin
SOP Package
CXK5V8257BTM
28 pin TSOP (Plastic)
CXK5V8257BM
28 pin SOP (Plastic)
Block Diagram
A14
A13
A12
A11
A9
A8
A7
A6
A5
A10
A4
A3
A2
A1
A0
Buffer
Buffer
CXK5V8257BYM
28 pin TSOP (Plastic)
Row
Decoder
Memory
Matrix
512 × 512
I /O Gate
Column
Decoder
VCC
GND
Function
32768-word × 8 bit static RAM
Structure
OE
WE
CE
Buffer
I /O Buffer
I /O8
I /O1
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93836A5Z-ST
Pin Configuration (Top View) Pin Description
CXK5V8257BTM/BYM/BM
21
OE
A11
A13
WE
Vcc
A14
A12
A12
A14
Vcc
WE
A13
A11
OE
22
23
A9
24
A8
25
26
27
28
1
2
3
A7
4
A6
5
A5
6
A4
7
A3
A3
7
A4
6
5
A5
4
A6
3
A7
2
1
28
27
26
A8
25
A9
24
23
22
CXK5V8257BTM
(Standard Pinout)
CXK5V8257BYM
(Mirror Image Pinout)
A10
A14
20
CE
I/O8
19
I/O7
18
I/O6
17
I/O5
16
15
I/O4
14
GND
13
I/O3
12
I/O2
11
I/O1
10
A0
9
A1
8
A2
8
A2
9
A1
10
A0
11
I/O1
12
I/O2
13
I/O3
14
GND
15
I/O4
I/O5
16
I/O6
17
I/O7
18
I/O8
19
CE
20
A10
21
1
A12
2
A7
3
A6
4
A5
5
6
A4
7
A3
8
A2
9
A1
10
A0
11
I/O1
12
I/O2
13
I/O3
14
GND
CXK5V8257BM
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Absolute Maximum Ratings (Ta = 25°C, GND = 0V)
Item Symbol Rating Unit
Supply voltage
VCC
–0.5 to +4.6
V
Vcc
WE
A13
A8
A9
A11
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
Symbol Description
A0 to A14
I/O1 to I/O8
CE
WE
OE
VCC
GND
Address input
data input/output
Chip enable input
Write enable input
Output enable input
+3.3V power supply
Ground
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time
∗1
VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
VIN
VI/O
PD
Topr
Tstg
Tsolder
–0.5∗1to VCC + 0.5
–0.5∗1to VCC + 0.5
0.7
0 to +70
–55 to +150
235 · 10
V
V
W
°C
°C
°C · s
Truth Table
CE OE WE Mode I/O1 to I/O8 VCC Current
H
×
×
Not selected
L
H
H
Output disable
L
L
H
Read
L
×
L
Write
High Z
High Z
Data out
Data in
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
× : “H” or “L”
DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)
Item Symbol Min. Typ. Max. Unit
Supply voltage
Input high voltage
Input low voltage
∗2
VIL = –3.0V Min. for pulse width less than 50ns.
VCC
VIH
VIL
3.0
2.0
–0.3
∗2
3.3
—
—
– 2 –
3.6
VCC + 0.3
0.8
V
CXK5V8257BTM/BYM/BM
Electrical Characteristics
• DC characteristics (VCC = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
∗
—
1
Max. Unit
0.5
µA
Item Symbol Test Conditions Min. Typ.
Input leakage current
ILI
VIN = GND to VCC
–0.5
Output leakage
current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
∗
1
VCC = 3.3V, Ta = 25°C
ILO
ICC1
ICC2
ISB1
ISB2
VOH
VOL
CE = VIH,
OE = VIH or WE = VIL,
VI/O = GND to VCC
CE = VIL,
VIN = VIH or VIL,
IOUT = 0mA
Min. cycle,
Duty = 100%, IOUT = 0mA
CE ≥ VCC – 0.2V
CE = VIH
IOH = –2mA
IOL = 2.0mA
70LL
10LL
0 to +70°C
0 to +40°C
+25°C
–0.5
—
—
—
—
—
—
—
2.4
—
—
0.9
21
18
—
—
0.12
0.06
—
—
0.5
2
40
35
3.5
0.7
0.35
0.7
—
0.4
µA
mA
mA
µA
mA
V
V
I/O capacitance (Ta = 25°C, f = 1MHz)
Item Symbol Test condition Min. Typ. Max. Unit
Input capacitance
I/O capacitance
CIN
CI/O
VIN = 0V
VI/O = 0V
—
—
—
—
8
10
pF
pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test conditions (VCC = 3.3V ± 0.3V, Ta = 0 to +70°C)
Item Conditions
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load
conditions
∗2
CL includes scope and jig capacitances.
-70LL
-10LL
VIH = 2.0V
VIL = 0.8V
tr = 5ns
tf = 5ns
1.4V
CL∗2= 30pF, 1TTL
∗2
CL
= 100pF, 1TTL
C
L
TTL
– 3 –
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