Sony CXK5T81000AYN-12LLX, CXK5T81000AYN-10LLX, CXK5T81000ATN Datasheet

CXK5T81000ATN/AYN-10LLX/12LLX

For the availability of this product, please contact the sales office.

131072-word × 8-bit High Speed CMOS Static RAM

Description

The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits.

Special feature are low power consumption and high speed.

The CXK5T81000ATN/AYN is a suitable RAM for portable equipment with battery back up.

Features

• Extended operating temperature range:

–25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time: (Access time)

3.0V operation -10LLX 100ns (Max.)

-12LLX 120ns (Max.)

3.3V operation -10LLX 85ns (Max.)

-12LLX 100ns (Max.)

• Low standby current: 28µA (Max.)

• Low data retention current: 24µA (Max.)

• Low power data retention: 2.0V (Min.)

• Package 8mm × 13.4mm 32 pin TSOP package

Function

131072-word × 8-bit static RAM

Structure

Silicon gate CMOS IC

CXK5T81000ATN

32 pin TSOP (Plastic)

Block Diagram

A10 A11

A9

A8 A13 A15 A16 A14 A12

A7

A6

A5

A4

A3

A2

A1

A0

OE

WE

CE1 CE2

Buffer

Preliminary

CXK5T81000AYN

32 pin TSOP (Plastic)

Row

Decoder

Memory

Matrix

1024 × 1024

I/O Gate

Column

Decoder

I/O Buffer

I/O1 I/O8

V

CC

GND

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

PE96726-PS

CXK5T81000ATN/AYN

Pin Configuration (Top View)

A11

A13

CE2 A15

A16 A14 A12

CE2

WE

V NC

A12 A14 A16

V A15

WE A13

A11

1 2

A9

3

A8

4 5 6 7

CC

8

9 10 11 12

A7

13

A6

14 15

A5

16

A4

16

A4 A5

15

A6

14

A7

13 12 11 10

9

NC

8

CC

7

6

5

4

A8

3

2

A9

1

CXK5T81000ATN (Standard Pinout)

CXK5T81000AYN

(Mirror Image Pinout)

32

OE

31

A10

30

CE1

29

I/O8 I/O7

28

I/O6

27 26

I/O5

25

I/O4

24

GND

23

I/O3 I/O2

22

I/O1

21

A0

20

A1

19

A2

18 17

A3

17

A2

18

A1

19

A0

20

I/O1

21

I/O2

22

I/O3

23

GND

24

I/O4

25

I/O5

26

I/O6

27

I/O7

28 29

I/O8

30

CE1

31

A10

32

OE

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit

Supply voltage

VCC

–0.5 to +4.6

V

Pin Description

Symbol Description A0 to A16 I/O1 to I/O8 CE1, CE2 WE OE VCC GND NC

Address input Data input output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground No connection

Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time

∗1

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VIN VI/O PD Topr Tstg Tsolder

–0.5∗1to VCC + 0.5 –0.5∗1to VCC + 0.5

0.7

–25 to +85

–55 to +150

235 · 10

V V

W °C °C

°C · s

Truth Table

CE1 CE2 OE

H

×

L

×

L

H

L

H

L

H

×

WE

× ×

H H

L

Mode I/O pin VCC Current Not selected Not selected Output disable Read Write

High Z High Z High Z Data out Data in

ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

× : “H” or “L”

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Symbol

Min. Supply voltage Input high voltage Input low voltage

∗2

VIL = –3.0V Min. for pulse width less than 50ns.

VCC VIH VIL

2.7

2.4

–0.3

∗2

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Typ. Max.

3.3 — —

3.6

VCC + 0.3

0.4

Min. Typ. Max.

3.0

2.2

–0.3

∗2

3.3 — —

VCC + 0.3

– 2 –

Unit

3.6 V

0.6

Electrical Characteristics

CXK5T81000ATN/AYN

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply current

Average operating current

Standby current

Output high voltage

ILI

ILO

ICC1

ICC2

ICC3

ISB1

ISB2 VOH

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

VIN = GND to VCC CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL VI/O = GND to VCC

CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA

Min. cycle duty = 100% IOUT = 0mA

Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V

CE2 ≤ 0.2V

CE1 ≥ Vcc – 0.2V

or

{

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –2.0mA

–25 to +85°C –25 to +70°C +25°C

10LLX

12LLX

∗1

Typ.

–1

—

— —

—510

— — — —

2.4

—

1

25 25

— —

0.48

0.12 —

∗2

Max. UnitTest conditions

+1

3

35 35

28 14 —

1.4 —

∗3

µA

mA

µA

mA

V

Output low voltage

∗1

VCC = 3.3V, Ta = 25°C

∗2

ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗3

ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditions Min. Typ. Max. Unit Input capacitance I/O capacitance

Note) This parameter is sampled and is not 100% tested.

VOL

CIN CI/O

IOL = 2.0mA

VIN = 0V VI/O = 0V

— —

8

10

—

pF pF

—

0.4

V

– 3 –