Sony CXK5T81000ATM, CXK5T81000AM-12LLX, CXK5T81000AM-10LLX, CXK5T81000AYM Datasheet

CXK5T81000ATM/AYM/AM-10LLX/12LLX

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131072-word × 8-bit High Speed CMOS Static RAM

Description

The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.

Special feature are low power consumption and high speed.

The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with battery back up.

Features

• Extended operating temperature range:

–25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time:

(Access time)

3.0V operation -10LLX 100ns (Max.)

-12LLX 120ns (Max.)

3.3V operation -10LLX 85ns (Max.)

-12LLX 100ns (Max.)

• Low standby current: 28µA (Max.)

• Low data retention current: 24µA (Max.)

• Low voltage data retention: 2.0V (Min.)

• Package line-up

CXK5T81000ATM/AYM

8mm × 20mm 32 pin TSOP package

CXK5T81000AM

525mil 32 pin SOP package

Function

131072-word × 8-bit static RAM

Structure

Silicon gate CMOS IC

CXK5T81000ATM

32 pin TSOP (Plastic)

Block Diagram

A10 A11

A9

A8 A13 A15 A16 A14 A12

A7

A6

A5

A4

A3

A2

A1

A0

OE

WE

CE1 CE2

Buffer

CXK5T81000AM

32 pin SOP (Plastic)

Preliminary

CXK5T81000AYM

32 pin TSOP (Plastic)

Row

Decoder

Memory

Matrix

1024 × 1024

I/O Gate

Column

Decoder

I/O Buffer

I/O1 I/O8

VCC

GND

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

PE96324-ST

CXK5T81000ATM/AYM/AM

Pin Configuration (Top View)

A11

A13

CE2 A15

A16 A14 A12

CE2

WE

V NC

A12 A14 A16

V A15

WE A13

A11

1 2

A9

3

A8

4 5 6 7

CC

8

9 10 11 12

A7

13

A6

14 15

A5

16

A4

16

A4 A5

15

A6

14

A7

13 12 11 10

9

NC

8

CC

7

6

5

4

A8

3

2

A9

1

CXK5T81000ATM

(Standard Pinout)

CXK5T81000AYM

(Mirror Image Pinout)

32

OE

31

A10

30

CE1

29

I/O8 I/O7

28

I/O6

27 26

I/O5

25

I/O4

24

GND

23

I/O3

22

I/O2 I/O1

21

A0

20

A1

19

A2

18 17

A3

17

A2

18

A1

19

A0

20

I/O1

21

I/O2

22

I/O3

23

GND

24

I/O4

25

I/O5

26

I/O6

27

I/O7

28 29

I/O8

30

CE1

31

A10

32

OE

NC A16 A14 A12

A7 A6 A5 A4 A3 A2 A1

A0 I/O1 I/O2 I/O3

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

CXK5T81000AM

32

V

CC

31

A15

30

CE2

29

WE

28

A13

27

A8

26

A9

25

A11

24

OE

23

A10

22

CE1

21

I/O8

20

I/O7

19

I/O6

18

I/O5

17

I/O4

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit

Pin Description

Symbol Description A0 to A16 I/O1 to I/O8 CE1, CE2 WE OE VCC GND NC

Address input Data input output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground No connection

Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time

∗1

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC VIN VI/O PD Topr Tstg Tsolder

–0.5 to +4.6 –0.5∗1to VCC + 0.5 –0.5∗1to VCC + 0.5

–25 to +85

–55 to +150

Truth Table

CE1 CE2 OE

H

×

L

×

L

H

L

H

L

H

×

WE

× ×

H H

L

Mode I/O pin VCC Current Not selected Not selected Output disable Read Write

0.7

235 · 10

High Z High Z High Z Data out Data in

V V V

W °C °C

°C · s

ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

× : “H” or “L”

– 2 –

CXK5T81000ATM/AYM/AM

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Supply voltage Input high voltage Input low voltage

∗1

VIL = –3.0V Min. for pulse width less than 50ns.

Electrical Characteristics

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply current

Average operating current

Symbol

VCC VIH VIL

ILI

ILO

ICC1

ICC2

ICC3

Min.

2.7

2.4

∗1

–0.3

VIN = GND to VCC CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL VI/O = GND to VCC

CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA

Min. cycle duty = 100% IOUT = 0mA

Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Typ. Max.

3.3 — —

3.6

VCC + 0.3

0.4

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

10LLX

12LLX

Min. Typ. Max.

–1

—

— —

—

3.3 — —

Typ.

—

25 25

VCC + 0.3

∗1

1

∗2

5

3.0

2.2

–0.3

∗1

3.6

0.6

Max. UnitTest conditions

+1

3

35 35

10

Unit

V

µA

mA

∗3

mA

CE2 ≤ 0.2V

Standby current

Output high voltage Output low voltage

∗1

VCC = 3.3V, Ta = 25°C

∗2

ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗3

ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

ISB1

ISB2 VOH VOL

CE1 ≥ Vcc – 0.2V

or

{

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –2.0mA IOL = 2.0mA

– 3 –

–25 to +85°C –25 to +70°C +25°C

— — — —

2.4 —

— —

0.48

0.12 — —

28 14 —

1.4 —

0.4

µA

mA

V V

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditions Min. Typ. Max. Unit

CXK5T81000ATM/AYM/AM

Input capacitance I/O capacitance

CIN CI/O

VIN = 0V VI/O = 0V

— —

8

10

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (Ta = –25 to +85°C)

Item

Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level

-10LLX

Output load conditions

-12LLX

VCC = 2.7 to 3.6V

VIH = 2.4V VIL = 0.4V

tr = 5ns tf = 5ns

1.4V CL∗1= 100pF, 1TTL CL∗1= 100pF, 1TTL

Conditions

VCC = 3.3V ± 0.3V

VIH = 2.2V VIL = 0.6V

tr = 5ns tf = 5ns

1.4V CL∗1= 30pF, 1TTL

∗

1

CL

= 100pF, 1TTL

pF pF

• Test circuit

L

C

TTL

1

∗

CL includes scope and jig capacitances.

– 4 –