Sony CXK5T16100TM-12LLX Datasheet

CXK5T16100TM-12LLX

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65536-word × 16-bit High Speed CMOS Static RAM

Description

The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.

Special feature are low power consumption and high speed.

The CXK5T16100TM is a suitable RAM for portable equipment with battery back up.

Features

• Extended operating temperature range: –25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time: (Access time)

3.0V operation 120ns (max.)

3.3V operation 100ns (max.)

• Low power consumption operation:

Standby / DC operation

1.6µW (typ.) / 3.3mW (typ.)

100µW (max.) / 11mW (max.)

• Fully static memory ··· No clock or timing strobe

required

• Equal access and cycle time

• Common data input and output: three state output

• Directly LVTTL compatible: All inputs and outputs

• Low voltage data retention: 2.0V (min.)

• 400mil 44pin TSOP (type II) package

Block Diagram

A1 A0 A7 A6 A5 A4 A3 A2 A15

A14

CE UB LB OE WE

A13 A12 A11 A10 A9 A8

44 pin TSOP (PIastic)

Buffer

Control

Buffer

Vcc

GND

Preliminary

Memory

Matrix

512 × 1024

I/O Gate Column Decoder

I/O Buffer

I/O1 I/O8

Row

Decoder

Pre

Decoder

Memory

Matrix

512 × 1024

I/O Gate

Column

Decoder

I/O Buffer

I/O9 I/O16

Vcc

GND

Function

65536-word x 16-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

PE96405-ST

CE I/O1 I/O2 I/O3 I/O4

Vcc

GND

I/O5 I/O6 I/O7 I/O8

WE A15 A14 A13 A12

NC

CXK5T16100TM

Pin DescriptionPin Configuration (Top View)

1

A4

2

A3

3

A2

4

A1

5

A0

6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

44

A5

43

A6

42

A7

41

OE

40

UB

39

LB

38

I/O16

37

I/O15

36

I/O14

35

I/O13

34

GND

33

Vcc

32

I/O12

31

I/O11

30

I/O10

29

I/O9

28

NC

27

A8

26

A9

25

A10

24

A11

23

NC

Symbol A0 to A15 I/O1 to I/O16 CE LB UB WE OE VCC GND NC

Address input Data input/output Chip enable input Byte enable input (I/O1 to I/O8) Byte enable input (I/O9 to I/O16) Write enable input Output enable input Power supply Ground No connection

Description

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time

∗1

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC VIN VI/O PD Topr Tstg Tsolder

–0.5 to +4.6 –0.5∗1to VCC + 0.5 –0.5∗1to VCC + 0.5

0.7

–25 to +85

–55 to +150

235 · 10

V V V

W °C °C

°C · s

Truth Table

CE

OE WE LB UB I/O1 to I/O8 I/O9 to I/O16 Vcc Current

H

×

L

H

L

H

×

L

H

L

Not selected Read Read High-Z

Not selected Read High-Z Read

ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

L

×

L

H

L

×

×: “H” or “L”

L

H

×

H

Write

L

Write

H

Not Write/Hi-Z

L

High-Z

×

High-Z

H

Write Not Write/Hi-Z Write High-Z High-Z

ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

– 2 –

CXK5T16100TM

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Supply voltage Input high voltage Input low voltage

∗1

VIL=–3.0V Min. for pulse width less than 50ns.

Symbol

VCC VIH VIL

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Min.

2.7

2.4

–0.3

∗1

Typ. Max.

3.3 — —

3.6

VCC + 0.3

0.4

Min. Typ. Max.

3.0

2.0

∗1

–0.3

3.3 — —

3.6

VCC + 0.3

0.8

Unit

V

Electrical Characteristics

DC and operating characteristics (VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

—

∗2

Max. UnitTest condition

1

3

µA

mA

Item Symbol Min. Typ.

Input leakage current

Output leakage current

Operating power supply current

ILI

ILO

ICC1

VIN = GND to VCC CE = VIH or UB = VIH or LB = VIH or

OE = VIH or WE = VIL VI/O = GND to VCC

CE = VIL VIN = VIH or VIL IOUT = 0mA

–1

—

Min. cycle

ICC2

Duty = 100%

—

35

50

mA

IOUT = 0mA

Average operating current

Standby current

Output high voltage

Output low voltage

∗2

VCC = 3.3V, Ta = 25°C

ICC3

ISB1

ISB2 VOH

VOL

Cycle time 1µs Duty = 100% IOUT = 0mA CE ≤ 0.2V VIL ≤ 0.2V VIH ≥ VCC – 0.2V

CE ≥ VCC – 0.2V

CE = VIH IOH = –2.0mA

IOL = 2.0mA

–25 to +85°C –25 to +70°C +25°C

—

— — — —

2.4

—

10

— —

0.48

0.03 —

—

20

28 14 —

0.6 —

0.4

mA

µA

mA

V

– 3 –