Sony CXK5B81020TM-12, CXK5B81020J Datasheet

CXK5B81020J/TM
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131072-word × 8-bit High Speed Bi-CMOS Static RAM
-12
Description
CXK5B81020J/TM is a high speed 1M bit Bi-CMOS
CXK5B81020J
32 pin SOJ (PIastic)
32 pin TSOP (PIastic)
static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.
Features
Single 3.3V power supply: 3.3V ±0.3V
Fast access time 12ns (Max.)
Low standby current: 10mA (Max.)
Low power operation 864mW (Max.)
Package line-up
Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package
Function
131072 word × 8-bit static RAM
Structure
Silicon gate Bi-CMOS IC
CXK5B81020TM 400mil 32pin TSOP package
Block Diagram Pin Configuration (Top View) Pin Description
A15 A16 A9 A8 A13 A14 A11 A10
A12 A5
A4 A3
A0 A2
A1 A6 A7
Buffer
Buffer
Row
Decoder
Memory
Matrix
256 × 4096
I/O Gate Column Decoder
Vcc
GND
A3
1
A2
2
A1
3
A0
4
CE OE
5
I/O1
6
I/O2
7
Vcc
8
GND
9
I/O3
1 0
11
I/O4 WE
12
A16
13 14
A15
15
A14 A13
16
A4
32
A5
31
A6
30
A7
29
28
I/O8
27
I/O7
26
GND
25 24
Vcc
23
I/O6 I/O5
22
A8
2 1
A9
20
A10
19
A11
18 17
A12
Symbol Description A0 to A16 I/O1 to I/O8 CE WE OE VCC GND NC
Address input Data input Chip enable input Write enable input Output enable input +3.3V power supply Ground No connection
CXK5B81020TM
WE OE
CE
I/O
Buffer
I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E93707B58-PP
Absolute Maximum Ratings (Ta = 25°C, GND = 0V)
Item Symbol Rating Unit
Supply voltage Input voltage Input and output voltage Allowable power dissipaiton
VCC VIN VI/O PD
–0.5 –0.5
–0.5
1
to VCC + 0.5
1
to VCC + 0.5
1.5
1
to +4.6
2
V V V
W
CXK5B81020J/TM
Operating temperature Storage temperature
Soldering temperature • time
1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns.
2 Air flow 1m/s.
Topr Tstg
Tsolder
J TM
0 to +70
–55 to +150
260 • 10 235 • 10
Truth Table
CE OE WE Mode I/O1 to I/O8 Current
H
×
×
Not selected
L
L
H
Read
L
×
L
Write
L
H
H
Output disable
High Z Data out Data in High Z
ISB1, ISB2 ICC ICC ICC
×: "H" or "L"
Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)
Item Symbol Min. Typ. Max. Unit
Supply voltage
VCC
3.0
3.3
3.6
V
°C
°C °C • sec °C • sec
Input high voltage Input low voltage
VIL = –2.0V Min. for pulse width less than 5ns.
VIH VIL
2.0
–0.3
— —
VCC + 0.3
0.8
V V
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CXK5B81020J/TM
Electrical Characteristics
DC Characteristics (Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Max Unit +10
µA
Item Symbol Conditions Min. Typ.
Input leakage current
ILI
VIN = GND to VCC
–10
CE = VIH or
Output leakage current
ILO
OE = VIH or WE = VIL
–10
+10
µA VI/O = GND to VCC Cycle: Min.
Duty = 100%
Average operating current
ICC
IOUT = 0mA
240
mA CE = VIL VIN = VIH or VIL
CE VCC – 0.2V
ISB1
VIN VCC – 0.2V or
10
mA VIN 0.2V
Standby current
ISB2
Cycle: Min.
Duty = 100%
CE = VIH
100
mA VIN = VIH or VIL
Output high voltage Output low voltage
Vcc = 3.3V, Ta = 25°C
VOH VOL
IOH = –2.0mA IOL = 2.0mA
2.4 —
— —
0.4
V V
I/O Capacitance (Ta = 25°C, f = 1MHz)
Item Symbol Conditions Min. Typ. Max Unit Input capacitance I/O capacitance
CIN CI/O
VIN = 0V VI/O = 0V
— —
— —
5 7
pF pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Item Condition Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level
VIH = 3.0V VIL = 0.0V
tr = 2ns tf = 2ns
1.4V
I/O Zo = 50
Output load (1)
V
L = 1.4V
L = 50
R
Output Load (2)
I/O
2
5pF
1
3.3V
1179
868
Output load conditions
Fig. 1
1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ2. Including scope and jig capacitances
Fig. 1
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