Sony CXK5B41020TM-12 Datasheet
CXK5B41020TM
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262144-word × 4-bit High Speed Bi-CMOS Static RAM
Description
CXK5B41020TM is a high speed 1M bit Bi-CMOS
static RAM organized as 262144 words by 4 bits.
Operating on a single 3.3V supply this asynchronous
IC is suitable for use in high speed and low power
applications.
Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 792mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B41020TM 400mil 32pin TSOP package
Function
262144 word × 4-bit static RAM
Structure
Silicon gate Bi-CMOS IC
32 pin TSOP (PIastic)
-12
Block Diagram Pin Configuration (Top View) Pin Description
A16
A17
A10
A9
A14
A15
A12
A11
A6
A13
A5
A4
A3
A0
A2
A1
A7
A8
WE
OE
CE
Buffer
Buffer
Row
Decoder
Memory
Matrix
256 × 4096
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O4
Vcc
GND
NC
A3
A2
A1
A0
CE
I/O1
Vcc
GND
I/O2
WE
A17
A16
A15
A14
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A4
32
A5
31
A6
30
A7
29
28
A8
27
OE
26
I/O4
25
GND
24
Vcc
23
I/O3
22
A9
A10
21
20
A11
19
A12
18
A13
17
NC
Symbol Description
A0 to A17
I/O1 to I/O4
CE
WE
OE
VCC
GND
NC
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3V power supply
Ground
No connection
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93726-ST
Absolute Maximum Ratings (Ta = 25°C, GND=0V)
Item Symbol Rating Unit
∗
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipaiton
VCC
VIN
VI/O
PD
–0.5
–0.5
–0.5
∗
1
to VCC + 0.5
∗
1
to VCC + 0.5
1.5
1
to +4.6
∗
2
V
V
V
W
CXK5B41020TM
Operating temperature
Storage temperature
Soldering temperature • time
∗
1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns.
∗
2 Air flow ≥ 1m/s.
Topr
Tstg
Tsolder
0 to +70
–55 to +150
235 • 10
Truth Table
CE OE WE Mode I/O1 to I/O4 Current
H
×
×
Not selected
L
L
H
Read
L
×
L
Write
L
H
H
Output disable
High Z
Data out
Data in
High Z
ISB1, ISB2
ICC
ICC
ICC
×: "H" or "L"
Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)
Item Symbol Min. Typ. Max. Unit
Supply voltage
Input high voltage
Input low voltage
∗
VIL=–2.0V Min. for pulse width less than 5ns.
VCC
VIH
VIL
3.0
2.0
–0.3
3.3
—
∗
—
3.6
VCC + 0.3
0.8
V
V
V
°C
°C
°C • sec
– 2 –
CXK5B41020TM
Electrical Characteristics
DC Characteristics (Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
—
∗
Max Unit
+10
µA
Item Symbol Conditions Min. Typ.
Input leakage current
ILI
VIN = GND to VCC
–10
CE = VIH or
Output leakage current
ILO
OE = VIH or
WE = VIL
–10
—
+10
µA
VI/O = GND to VCC
Cycle: Min.
Duty = 100%
Average operating current
ICC
IOUT = 0mA
—
—
220
mA
CE = VIL
VIN = VIH or VIL
CE ≥ VCC – 0.2V
ISB1
VIN ≥ VCC – 0.2V or
—
—
10
mA
VIN ≤ 0.2V
Standby current
ISB2
Cycle: Min.
Duty = 100%
CE = VIH
—
—
100
mA
VIN = VIH or VIL
Output high voltage
Output low voltage
∗
Vcc = 3.3V, Ta = 25°C
VOH
VOL
IOH = –2.0mA
IOL = 2.0mA
2.4
—
—
—
—
0.4
V
V
I/O Capacitance (Ta = 25°C, f = 1MHz)
Item Symbol Conditions Min. Typ. Max Unit
Input capacitance
I/O capacitance
CIN
CI/O
VIN = 0V
VI/O = 0V
—
—
—
—
5
7
pF
pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)
Item Condition
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
VIH = 3.0V
VIL = 0.0V
tr = 2ns
tf = 2ns
1.4V
I/O Zo=50Ω
Output load (1)
V
L=1.4V
R
L=50Ω
Output Load (2)∗
I/O
2
5pF∗
3.3V
1
1179Ω
868Ω
Output load conditions
Fig. 1
∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ
∗2. Including scope and jig capacitances
Fig. 1
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