Sony CXK5B16120TM-12, CXK5B16120J Datasheet
CXK5B16120J/TM
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65536-word × 16-bit High Speed Bi-CMOS Static RAM
-12
Description
CXK5B16120J/TM is a high speed 1M bit Bi-
CXK5B16120J
44 pin SOJ (Plastic)
CXK5B16120TM
44 pin TSOP (Plastic)
CMOS static RAM organized as 65536 words by 16
bits. Operating on a single 3.3V supply this
asynchronous IC is suitable for use in high speed
and low power applications.
Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 972mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B16120J 400mil 44pin SOJ Package
Function
65536-word × 16-bit static RAM
Structure
Silicon gate Bi-CMOS IC
CXK5B16120TM 400mil 44pin TSOP Package
Block Diagram Pin Description
A14
A15
A9
A8
A12
A13
A11
A10
A5
A4
A3
A0
A2
A1
A6
A7
UB
LB
WE
OE
Buffer
Buffer
Row
Decoder
Memory
Matrix
256 × 4096
GND
I/O Gate
Column
Decoder
I/O
Buffer
Pin configuration
A4
1
A3
2
Vcc
A2
3
A1
4
5
A0
6
CE
I/O1
7
I/O2
8
I/O3
9
I/O4
1
0
Vcc
11
GND
12
I/O5
13
I/O6
14
I/O7
15
I/O8
16
WE
17
A15
18
A14
19
A13
20
A12
21
NC
22
(Top View)
Symbol
A5
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
GND
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
A0 to A15
I/O1
to I/O8
I/O9
to I/O16
CE
WE
OE
LB
UB
Vcc
GND
NC
Address input
Data input output
(lower byte I/O)
Data input output
(upper byte I/O)
Chip enable input
Write enable input
Output enable input
Lower byte select input
Upper byte select input
+3.3V Power supply
Ground
No connection
Description
CE
I/O1 I/O16
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93605A57-PK
Absolute Maximum Ratings (Ta = 25°C, GND = 0V)
Item Symbol Rating Unit
∗
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
VCC
VIN
VI/O
PD
–0.5
–0.5
1
–0.5
∗
1
to VCC + 0.5
∗
1
to VCC + 0.5
1.5
to +4.6
∗
2
V
V
V
W
CXK5B16120J/TM
Operating temperature
Storage temperature
Soldering temperature • time
Topr
Tstg
Tsolder
J
TM
∗
1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns
∗
2 Air Flow ≥ 1m/s
Truth Table
CE
OE WE LB UB Mode I/O1 to I/O8 I/O9 to I/O16 Current
H
×
×
×
×
Not selected
L
L
Read
L
H
L
L
H
H
H
L
L
×
L
L
Read
L
Read
H
Not selected
L
Write
H
Write
0 to +70
–55 to +150
260 • 10
235 • 10
High Z
Data Out
Data Out
High Z
High Z
Data in
Data in
°C
°C
°C • sec
°C • sec
High Z
Data out
High Z
Data out
High Z
Data in
High Z
ISB1, ISB2
ICC
ICC
ICC
ICC
ICC
ICC
H
L
Write
L
H
H
×
×
Output disable
L
×
×
H
H
Not selected
High Z
High Z
High Z
~ : “H” or “L”
Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)
Item Symbol Min. Typ. Max. Unit
Supply voltage
Input high voltage
Input low voltage
∗
VIL = –2.0V Min. for pulse width less than 5ns
VCC
VIH
VIL
3.0
2.0
–0.3
3.3
—
∗
—
3.6
VCC + 0.3
0.8
V
V
V
Data in
High Z
High Z
ICC
ICC
ICC
– 2 –
CXK5B16120J/TM
Electrical Characteristics
DC Characteristics (Vcc = 3.3V±0.3V, GND = 0V, Ta = 0 to +70°C)
∗
Item Symbol Conditions
Min.
Typ.
Max. Unit
Input leakage current
ILI
VIN = GND to Vcc
CE = VIH or OE = VIH or WE = VIL or
Output leakage current
ILO
UB = VIH or LB = VIH
VI/O = GND to Vcc
Average operating
current
Standby current
ICC
ISB1
ISB2
Min. Cycle
Duty =100%
IOUT = 0mA, CE = VIL, VIN = VIH or VIL
CE ≥ Vcc – 0.2V
VIN ≥ Vcc – 0.2V or VIN ≤ 0.2V
Min. Cycle
Duty =100%
CE = VIH, VIN = VIH or VIL
Output high voltage
Output low voltage
VOH
VOL
IOH = –2.0mA
IOL = 2.0mA
* Vcc = 3.3V, Ta = 25°C
I/O Capacitance (Ta = 25°C, f = 1MHz)
Item
Input capacitance
Symbol Conditions Min. Typ. Max. Unit
CIN
VIN = 0V
—
—
5
pF
–10
–10
—
—
—
2.4
—
—
—
—
—
—
—
—
+10
+10
270
10
100
—
0.4
µA
µA
mA
mA
mA
V
V
I/O capacitance
CI/O
VI/O = 0V
—
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test condition (Vcc = 3.3V±0.3V, Ta = 0 to +70°C)
Item
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
Condition
VIH = 3.0V
VIL = 0.0V
tr = 2ns
tf = 2ns
1.4V
Fig. 1
—
*1. For tLZ, tOLZ, tLBLZ, tUBLZ, tHZ, tOHZ, tLBHZ, tUBHZ, tOW, tWHZ
*2. Including scope and jig capacitances.
7
I/O
pF
Output load (1)
Zo=50Ω
Output load (2)*
I/O
2
5pF*
3.3V
V
L=1.4V
1
1179Ω
868Ω
L=50Ω
R
– 3 –
Fig. 1
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