Sony CXK591000YM, CXK591000TM, CXK591000M-70LL, CXK591000M-55LL, CXK591000M-10LL Datasheet

CXK591000TM/YM/M

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131,072-word × 9-bit High Speed CMOS Static RAM

Description

The CXK591000TM/YM/M is a high speed CMOS

static RAM organized as 131,072-words by 9 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed.

The CXK591000TM/YM/M is a suitable RAM for portable equipment with battery back up and parity bit.

Features

• Fast access time

CXK591000TM/YM/M (Access time)

-55LL 55ns (Max.)

-70LL 70ns (Max.)

-10LL 100ns (Max.)

• Low standby current

CXK591000TM/YM/M

-55LL/70LL/10LL 24µA (Max.)

• Low data retention current

CXK591000TM/YM/M

-55LL/70LL/10LL 14µA (Max.)

• Single +5V supply: 5V ± 10%.

• Low voltage date retention: 2.0V (Min.)

• Broad package line-up

CXK591000TM/YM

8mm × 20mm 32 pin TSOP Package CXK591000M 525mil 32 pin SOP Package

CXK591000TM

32 pin TSOP (PIastic)

32 pin SOP (PIastic)

Block Diagram

A10 A11

A9

A8 A13 A15 A16 A14 A12

A7

A6

A5

A4

A3

A2

A1

A0

Buffer

CXK591000M

-55LL/70LL/10LL

CXK591000YM

32 pin TSOP (PIastic)

Row

Decoder

Memory

Matrix

1024 × 1152

I /O Gate

Column

Decoder

VCC

GND

Function

131072 word × 9 bit static RAM

Structure

OE

WE

CE1 CE2

Buffer

I /O Buffer

I/O9

I/O1

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E93X06-PS

CXK591000TM/YM/M

Pin Configuration (Top View)

1

A11

2

A9

3

A8

4

A13

WE

5 6

CE2

A15 Vcc A16 A14 A12

A12 A14 A16

Vcc

A15

CE2

WE

A13

A11

7 8

9 10 11 12

A7

13

A6

14

A5

15

A4 A3

16

A3

15

A4

14

A5

13

A6

12

A7

11 10

9

8

7

6

5

4

3

A8

2

A9

1

CXK591000TM

(Standard Pinout)

CXK591000YM

(Mirror Image Pinout)

Pin Description

32

OE

31

A10

30

CE1

29

I/O9

28

I/O8

27

I/O7

26

I/O6

25

I/O5

24

GND

23

I/O4

22

I/O3

21

I/O2

20

I/O1

19

A0

18

A1

17

A2

17

A2

18

A1

19

A0

20

I/O1 I/O2

21

I/O3

22 23

I/O4

24

GND

25

I/O5

26

I/O6

27

I/O7

28

I/O8

29

I/O9

30

CE1

31

A10

32

OE

A16 A14 A12

A7 A6 A5 A4 A3 A2 A1

A0 I/O1 I/O2 I/O3 I/O4

GND

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16

CXK591000M

Vcc

32

A15

31 30

CE2

29

WE

28

A13

27

A8

26

A9

25

A11 OE

24

A10

23

CE1

22

I/O9

21

I/O8

20

I/O7

19

I/O6

18

I/O5

17

Symbol Description A0 to A16 I/O1 to I/O9 CE1, CE2 WE OE VCC GND

Address input Data input/output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperrature · time

∗

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC VIN VI/O PD Topr Tstg Tsolder

–0.5 to +7.0 –0.5∗to VCC + 0.5 –0.5∗to VCC + 0.5

0.7

0 to +70

–55 to +150

235 · 10

V V V

W °C °C

°C · s

Truth Table

CE1 CE2 OE WE

H

×

L

×

L

H

Mode I/O pin VCC Current

Not selected Not selected Output disable

High Z High Z High Z

ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3

L

H

L

H

×: "H" or "L"

L

H

Read

×

L

Write

Data out Data in

ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

– 2 –

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit

CXK591000TM/YM/M

Supply voltage Input high voltage Input low voltage

∗

VIL = –3.0V Min. for pulse width less than 50ns.

VCC VIH VIL

4.5

2.2

–0.3

∗

Electrical Characteristics

• DC Characteristics

Item System Min.

Input leakage current Output leakage

current

Operating power supply current

ILI

ILO

ICC1

VIN = GND to VCC CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL VI/O = GND to VCC

CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA

Min. cycle

ICC2

duty = 100% IOUT = 0mA

5.0 — —

5.5

VCC + 0.3

0.8

V V V

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

∗

-55LL

-70LL

-10LL

–1

—

— — —

Typ.

—

8

50 45 40

Max. UnitTest conditions

100

+1

17

80 70

µA

mA

Average operating current

Standby current

Output high voltage Output low voltage

∗

VCC = 5V, Ta = 25°C

ICC3

ISB1

ISB2 VOH VOL

Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V

CE2 ≤ 0.2V

CE1 ≥ Vcc – 0.2V CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –1.0mA IOL = 2.1mA

0 to +70°C 0 to +40°C +25°C

—

— — — —

2.4 —

12 24

— —

0.8

2.4

0.6 — —

0.4

24

5

3

—

mA

µA

mA

V V

– 3 –

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditions Min. Typ. Max. Unit Input capacitance I/O capacitance

CIN CI/O

VIN = 0V VI/O = 0V

— —

7 8

pF pF

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 5V ± 10%, Ta = 0 to +70°C)

• Test circuit

Item Conditions

CXK591000TM/YM/M

Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level

-55LL

Output load conditions

-70LL/10LL

∗

CL includes scope and jig capacitances.

VIH = 2.2V VIL = 0.8V tr = 5ns tf = 5ns

1.5V CL∗= 30pF, 1TTL CL∗= 100pF, 1TTL

TTL

L

C

– 4 –