Sony CXK591000YM, CXK591000TM, CXK591000M-70LL, CXK591000M-55LL, CXK591000M-10LL Datasheet

CXK591000TM/YM/M

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131,072-word × 9-bit High Speed CMOS Static RAM

Description

The CXK591000TM/YM/M is a high speed CMOS

static RAM organized as 131,072-words by 9 bits.

A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.

Special feature are low power consumption and
high speed.

The CXK591000TM/YM/M is a suitable RAM for
portable equipment with battery back up and parity
bit.

Features

• Fast access time

CXK591000TM/YM/M (Access time)

-55LL 55ns (Max.)

-70LL 70ns (Max.)

-10LL 100ns (Max.)

• Low standby current

CXK591000TM/YM/M

-55LL/70LL/10LL 24µA (Max.)

• Low data retention current

CXK591000TM/YM/M

-55LL/70LL/10LL 14µA (Max.)

• Single +5V supply: 5V ± 10%.

• Low voltage date retention: 2.0V (Min.)

• Broad package line-up

CXK591000TM/YM

8mm × 20mm 32 pin TSOP Package
CXK591000M 525mil 32 pin SOP
Package

CXK591000TM

32 pin TSOP (PIastic)

32 pin SOP (PIastic)

Block Diagram

A10
A11

A9

A8
A13
A15
A16
A14
A12

A7

A6

A5

A4

A3

A2

A1

A0

Buffer

Buffer

CXK591000M

-55LL/70LL/10LL

CXK591000YM

32 pin TSOP (PIastic)

Row

Decoder

Memory

Matrix

1024 × 1152

I /O Gate

Column

Decoder

VCC

GND

Function

131072 word × 9 bit static RAM

Structure

OE

WE

CE1
CE2

Buffer

I /O Buffer

I/O9

I/O1

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E93X06-PS

CXK591000TM/YM/M

Pin Configuration (Top View)

1

A11

2

A9

3

A8

4

A13

WE

5
6

CE2

A15
Vcc
A16
A14
A12

A12
A14
A16

Vcc

A15

CE2

WE

A13

A11

7
8

9
10
11
12

A7

13

A6

14

A5

15

A4
A3

16

16

A3

15

A4

14

A5

13

A6

12

A7

11
10

9

8

7

6

5

4

3

A8

2

A9

1

CXK591000TM

(Standard Pinout)

CXK591000YM

(Mirror Image Pinout)

Pin Description

32

OE

31

A10

30

CE1

29

I/O9

28

I/O8

27

I/O7

26

I/O6

25

I/O5

24

GND

23

I/O4

22

I/O3

21

I/O2

20

I/O1

19

A0

18

A1

17

A2

17

A2

18

A1

19

A0

20

I/O1
I/O2

21

I/O3

22
23

I/O4

24

GND

25

I/O5

26

I/O6

27

I/O7

28

I/O8

29

I/O9

30

CE1

31

A10

32

OE

A16
A14
A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O1
I/O2
I/O3
I/O4

GND

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16

CXK591000M

Vcc

32

A15

31
30

CE2

29

WE

28

A13

27

A8

26

A9

25

A11
OE

24

A10

23

CE1

22

I/O9

21

I/O8

20

I/O7

19

I/O6

18

I/O5

17

Symbol Description
A0 to A16
I/O1 to I/O9
CE1, CE2
WE
OE
VCC
GND

Address input
Data input/output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperrature · time

∗

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC
VIN
VI/O
PD
Topr
Tstg
Tsolder

–0.5 to +7.0
–0.5∗to VCC + 0.5
–0.5∗to VCC + 0.5

0.7

0 to +70

–55 to +150

235 · 10

V
V
V

W
°C
°C

°C · s

Truth Table

CE1 CE2 OE WE

H

×

×

×

×

L

×

×

L

H

H

H

Mode I/O pin VCC Current

Not selected
Not selected
Output disable

High Z
High Z
High Z

ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3

L

H

L

H

×: "H" or "L"

L

H

Read

×

L

Write

Data out
Data in

ICC1, ICC2, ICC3
ICC1, ICC2, ICC3

– 2 –

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit

CXK591000TM/YM/M

Supply voltage
Input high voltage
Input low voltage

∗

VIL = –3.0V Min. for pulse width less than 50ns.

VCC
VIH
VIL

4.5

2.2

–0.3

∗

Electrical Characteristics

• DC Characteristics

Item System Min.

Input leakage current
Output leakage

current

Operating power supply
current

ILI

ILO

ICC1

VIN = GND to VCC
CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL
VI/O = GND to VCC

CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA

Min. cycle

ICC2

duty = 100%
IOUT = 0mA

5.0
—
—

5.5

VCC + 0.3

0.8

V
V
V

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

∗

-55LL

-70LL

-10LL

–1

–1

—

—
—
—

Typ.

—

—

8

50
45
40

Max. UnitTest conditions

100

+1

+1

17

80
70

µA

µA

mA

mA

Average operating current

Standby current

Output high voltage
Output low voltage

∗

VCC = 5V, Ta = 25°C

ICC3

ISB1

ISB2
VOH
VOL

Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V

CE2 ≤ 0.2V

CE1 ≥ Vcc – 0.2V
CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –1.0mA
IOL = 2.1mA

0 to +70°C
0 to +40°C
+25°C

—

—
—
—
—

2.4
—

12 24

—
—

0.8

2.4

0.6
—
—

0.4

24

5

3

—

mA

µA

mA

V
V

– 3 –

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditions Min. Typ. Max. Unit
Input capacitance
I/O capacitance

CIN
CI/O

VIN = 0V
VI/O = 0V

—
—

—
—

7
8

pF
pF

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 5V ± 10%, Ta = 0 to +70°C)

• Test circuit

Item Conditions

CXK591000TM/YM/M

Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level

-55LL

Output load conditions

-70LL/10LL

∗

CL includes scope and jig capacitances.

VIH = 2.2V
VIL = 0.8V
tr = 5ns
tf = 5ns

1.5V
CL∗= 30pF, 1TTL
CL∗= 100pF, 1TTL

TTL

L

C

– 4 –