Sony CXK58512TM, CXK58512M-70LL, CXK58512M-55LL, CXK58512M-10LL Datasheet

CXK58512TM/M-55LL/70LL/10LL

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65536-word × 8-bit High Speed CMOS Static RAM

Description

The CXK58512TM/M is a high speed CMOS static

RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption, high speed.

The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

CXK58512TM

32 pin TSOP (Plastic)

Block Diagram

∗

Under development

CXK58512M

32 pin SOP (Plastic)

Features

• Fast access time (Access time)

-55LL 55ns (Max.)

-70LL 70ns (Max.)

-10LL 100ns (Max.)

• Low standby current 10µA (Max.)

• Low data retention current 6µA (Max.)

• Single +5V supply: +5V ±10%

• Low voltage data retention: 2.0V (Min.)

• Broad package line-up

CXK58512TM 8mm × 20mm 32 pin TSOP package

CXK58512M 525mil 32 pin SOP Package

Function

65536-word × 8 bit static RAM

Structure

Silicon gate CMOS IC

A15 A13

A8

A11

A9 A7 A6

A5 A14 A12

A4

A3 A10

A0

A2

A1

OE

WE

CE1 CE2

Buffer

Row

Decoder

Memory

Matrix

1024 × 512

I/O Gate

Column

Decoder

I/O Buffer

I/O1

I/O8

VCC

GND

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E94915A58-PK

CXK58512TM/M

Pin Configuration (Top View)

A11

A13

WE

CE2

A15 Vcc

A14 A12

1 2

A9

3

A8

4 5 6 7 8

NC

9

NC

10 11 12

A7

13

A6

14

A5

15

A4

16

CXK58512TM

32

OE

31

A10

30

CE1 I/O8

29

I/O7

28

I/O6

27

I/O5

26

I/O4

25

GN

24

D

23

I/O3 I/O2

22

I/O1

21

A0

20

A1

19

A2

18

A3

17

A14 A12

I/O1 I/O2 I/O3

GND

NC NC

A7 A6 A5 A4 A3 A2 A1 A0

1 2 3 4 5 6 7 8 9 1

0 1 1

12

1 3 1 4

15 16

CXK58512M

32

Vcc

31

A15

30

CE2 WE

29

A13

28

A8

27

A9

26

A11

25

OE

24

A10

23

CE1

22

I/O8 I/O7

21

I/O6

20

I/O5

19

I/O4

18 17

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit Supply voltage Input voltage Input and output voltage

VCC VIN VI/O

–0.5 to +7.0 –0.5∗to VCC + 0.5 –0.5∗to VCC + 0.5

V V V

Pin Description

Symbol Description A0 to A15 I/O1 to I/O8 CE1, CE2 WE OE VCC GND NC

Address input Data input output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground No connection

Allowable power dissipation Operating temperature Storage temperature Soldering temperature • time

∗

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

PD Topr Tstg Tsolder

0.7

0 to +70

–55 to +150

235 • 10

W °C °C

°C • s

Truth Table

CE1 CE2 OE WE

H

×

L

×

L

H

L

H

L

H

L

H

×

L

Mode I/O pin VCC Current

Not selected Not selected Output disable Read Write

High Z High Z High Z Data out Data in

ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

×: "H" or "L"

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit Supply voltage Input high voltage Input low voltage

∗

VIL = –3.0V Min. for pulse width less than 50ns.

VCC VIH VIL

4.5

2.2

–0.3

5.0 —

∗

—

5.5

VCC + 0.3

0.8

V V V

– 2 –

Electrical Characteristics

CXK58512TM/M

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply current

Average operating current

Standby current

ILI

ILO

ICC1

ICC2

ICC3

ISB1

ISB2

VIN = GND to VCC CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL VI/O = GND to VCC

CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA

Min. cycle duty = 100% IOUT = 0mA

Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V

CE2 0.2V

CE1 ≥ Vcc – 0.2V

orr

o

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

∗

-55LL

-70LL

-10LL

0 to +70°C 0 to +40°C +25°C

–1

—

— — —

—

— — — —

Typ.

—

7

45 40 35

10 20

— —

0.4

0.6

Max. UnitTest conditions

+1

15

90 70 60

10

2 1 3

µA

mA

µA

mA Output high voltage Output low voltage

∗

VCC = 5V, Ta = 25°C

VOH VOL

IOH = –1.0mA IOL = 2.1mA

2.4 —

— —

—

0.4

V V

– 3 –

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditons Min. Typ. Max. Unit

CXK58512TM/M

Input capacitance I/O capacitance

CIN CI/O

VIN = 0V VI/O = 0V

— —

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 5V ± 10%, Ta = 0 to +70°C)

Item Conditions Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level

-55LL

VIH = 2.2V VIL = 0.8V tr = 5ns tf = 5ns

1.5V CL∗= 30pF, 1TTL

Output load conditions

-70LL/10LL

∗

CL includes scope and jig capacitances.

CL∗= 100pF, 1TTL

— —

7 8

• Test circuit

L

C

pF pF

TTL

– 4 –