Sony CXK582000YM, CXK582000TM, CXK582000M-85LL, CXK582000M-10LL Datasheet

CXK582000TM/YM/M-85LL/10LL

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262144-word × 8-bit High Speed CMOS Static RAM

Description

The CXK582000TM/YM/M is a high speed CMOS

static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.

Special feature are low power consumption and
high speed and board package line-up.

The CXK582000TM/YM/M is a suitable RAM for
portable equipment with battery back up.

Features

• Fast access time (Access time)

-85LL 85ns (Max.)

-10LL 100ns (Max.)

• Low standby current 40µA (Max.)

• Low data retention current 24µA (Max.)

• Single +5V supply: 4.5V to 5.5V.

• Low voltage date retention : 2.0V (Min.)

• Broad package line-up

CXK582000TM/YM 8mm × 20mm 32 pin

TSOP Package

CXK582000M 525mil 32 pin

SOP Package

Function

262144 word x 8 bit static RAM

CXK582000TM

32 pin TSOP (PIastic)

32 pin SOP (PIastic)

Block Diagram

A10
A11

A9

A8
A13
A15
A17
A16
A14
A12

A7

Buffer

Preliminary

32 pin TSOP (PIastic)

CXK582000M

Row

Decoder

CXK582000YM

Memory

Matrix

2048 × 1024

VCC

GND

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

A6

A5

A4

A3

A2

A1

A0

OE

WE

CE1
CE2

Buffer

Buffer

I /O Gate

Column

Decoder

I /O Buffer

I/O1

I/O8

– 1 –

E94234-ST

CXK582000TM/YM/M

Pin Configuration (Top View)

1

A11

2

A9

3

A8

A13

4

WE

5

CE2

6

A15

Vcc
A17
A16
A14
A12

A12
A14
A16
A17

Vcc
A15
CE2

WE
A13

A11

7
8

9
10
11
12
13

A7

14

A6
A5

15
16

A4

16

A4

15

A5

14

A6

13

A7

12
11
10

9

8

7

6

5

4

A8

3

A9

2

1

CXK582000TM

(Standard Pinout)

CXK582000YM

(Mirror image Pinout)

Pin Description

32

OE

31

A10

30

CE1

29

I/O8

28

I/O7

27

I/O6

26

I/O5
I/O4

25

GND

24

I/O3

23

I/O2

22

I/O1

21

A0

20
19

A1

18

A2
A3

17

17

A3

18

A2

19

A1

20

A0

21

I/O1

22

I/O2

23

I/O3

24

GND

25

I/O4

26

I/O5
I/O6

27

I/O7

28

I/O8

29

CE1

30

A10

31

OE

32

A17
A16
A14
A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O1
I/O2
I/O3

GND

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16

CXK582000M

32

Vcc

31

A15

30

CE2

29

WE

28

A13

27

A8

26

A9

25

A11

24

OE

23

A10

22

CE1

21

I/O8

20

I/O7

19

I/O6

18

I/O5

17

I/O4

Symbol Description
A0 to A17
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND

Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time

VCC
VIN
VI/O
PD
Topr
Tstg
Tsolder

–0.5 to +7.0
–0.5∗ to VCC + 0.5
–0.5∗ to VCC + 0.5

0.7

0 to +70

–55 to +150

235 · 10

V
V
V

W
°C
°C

°C · s

∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

Truth Table

CE1 CE2 OE WE

H

×

×

×

×

L

×

×

L

H

H

H

Mode I/O pin VCC Current

Not selected
Not selected
Output disable

High Z
High Z
High Z

ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3

L

H

L

H

×: “H” or “L”

L

H

Read

×

L

Write

Data out
Data in

ICC1, ICC2, ICC3
ICC1, ICC2, ICC3

– 2 –

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit

CXK582000TM/YM/M

ILI

ILO

ICC1

ICC2

ICC3

VCC
VIH
VIL

4.5

2.2

–0.3∗

VIN = GND to VCC
CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL
VI/O = GND to VCC

CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA

Min. cycle
duty = 100%
IOUT = 0mA

Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V

Supply voltage
Input high voltage
Input low voltage

∗ VIL = –3.0V Min. for pulse width less than 50ns.

Electrical Characteristics

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply
current

Average operating current

5.0
—
—

5.5

VCC + 0.3

0.8

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

-85LLX

-10LLX

V
V
V

Typ.∗

–1

–1

—

—
—

—12

—

—

7

45
40

Max. UnitTest conditions

+1

+1

15

80
70

24

µA

µA

mA

mA

mA

Standby current

Output high voltage
Output low voltage

∗ VCC = 5V, Ta = 25°C

ISB1

ISB2
VOH

VOL

CE2 ≤ 0.2V

CE1 ≥ Vcc – 0.2V

or

{

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –1.0mA
IOL = 1.0mA

– 3 –

0 to +70°C
0 to +40°C
+25°C

—
—
—
—

2.4
—

—
—

1.4

0.6
—
—

40

8
4
3

—

0.4

µA

mA

V
V

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditons Min. Typ. Max. Unit

CXK582000TM/YM/M

Input capacitance
I/O capacitance

CIN
CI/O

VIN = 0V
VI/O = 0V

—
—

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 5V ± 10%, Ta = 0 to +70°C)

Item Conditions

Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions

VIH = 2.2V
VIL = 0.8V

tr = 5ns
tf = 5ns

1.5V
CL∗ = 100pF, 1TTL

∗ CL includes scope and jig capacitances.

—
—

7
8

pF
pF

TTL

L

C

– 4 –