Siemens SMBTA92, SMBTA93 Datasheet

Semiconductor Group 1

PNP Silicon Transistors for High Voltages SMBTA 92

SMBTA 93

Maximum Ratings

Type Ordering Code

(tape and reel)

Marking

Package

1)

Pin Configuration

SMBTA 92
SMBTA 93

Q68000-A6479
Q68000-A6483

s2D
s2E

SOT-23

B E C

1 2 3

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Parameter Symbol Values Unit

Emitter-base voltage VEB0

Collector-base voltage VCB0

Junction temperature Tj ˚C

Total power dissipation, T

S = 74 ˚C Ptot mW

Storage temperature range T

stg

Collector-emitter voltage VCE0 V

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 280 K/W

5

360
150

– 65 … + 150

300 200

SMBTA 92 SMBTA 93

Collector current IC mA500
Base current I

B 100

Junction - soldering point R

th JS ≤ 210

300 200

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: SMBTA 42, SMBTA 43 (NPN)

5.91

Semiconductor Group 2

SMBTA 92

SMBTA 93

Electrical Characteristics

at T

A = 25 ˚C, unless otherwise specified.

–DC current gain

I

C = 1 mA, VCE = 10 V

I

C = 10 mA, VCE = 10 V

1)

I

C = 30 mA, VCE = 10 V

1)

SMBTA 92
SMBTA 93

h

FE

25
40
25
25

–
–
–
–

–
–
–
–

VCollector-emitter breakdown voltage

I

C = 1 mA SMBTA 92

SMBTA 93

V

(BR)CE0

300
200

–
–

–
–

nA
nA

µA
µA

Collector-base cutoff current

VCB = 200 V SMBTA 92
V

CB = 160 V SMBTA 93

V

CB = 200 V, TA = 150 ˚C SMBTA 92

V

CB = 160 V, TA = 150 ˚C SMBTA 93

I

CB0

–
–
–
–

–
–
–
–

250
250
20
20

UnitValuesParameter Symbol

min. typ. max.

DC characteristics

Emitter-base breakdown voltage

I

E = 100 µA

V

(BR)EB0 5––

V

Collector-emitter saturation voltage

1)

I

C = 20 mA, IB = 2 mA SMBTA 92

SMBTA 93

VCEsat

–
–

–
–

0.5

0.4

MHzTransition frequency

I

C = 10 mA, VCE = 20 V, f = 100 MHz

f

T 50 – –

AC characteristics

pFOutput capacitance

V

CB = 20 V, f = 1 MHz SMBTA 92

SMBTA 93

C

obo

–
–

–
–

6
8

Collector-base breakdown voltage

I

C = 100 µA SMBTA 92

SMBTA 93

V

(BR)CB0

300
200

–
–

–
–

nAEmitter-base cutoff current

V

EB = 3 V

I

EB0 – – 100

Base-emitter saturation voltage

1)

I

C = 20 mA, IB = 2 mA

VBEsat – – 0.9

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.