Siemens SMBTA70 Datasheet

PNP Silicon Transistor SMBTA 70

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

Type Ordering Code

SMBTA 70 Q62702-M0003s2C SOT-23

Marking

(tape and reel)

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Emitter-base voltage VEB0 4
Collector current IC 100 mA
Peak collector current ICM 200
Peak base current IBM 100

tot 330 mW

Total power dissipation, T

S =71˚C

Junction temperature T
Storage temperature range T

P

j 150 ˚C
stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 310 K/W

Junction - soldering point Rth JS ≤ 240

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

SMBTA 70

Parameter Symbol

DC characteristics

V

(BR)CE0 40 – –

C = 1 mA

Emitter-base breakdown voltage

E = 100 µA

Collector-base cutoff current

CB = 30 V, IE = 0

V

CB = 30 V, IE = 0, TA = 150 ˚C

V

EB = 4 V, IC = 0

V

C = 5 mA, VCE = 10 V

C = 10 mA, IB = 1 mA

1)

V

(BR)EB0 4––

CB0

I

I

EB0 ––20

h

FE 40 – 400

V

CEsat – – 0.25

min. typ. max.

–
–

–
–

100
20

UnitValues

VCollector-emitter breakdown voltage

nA

µA

nAEmitter-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

AC characteristics

C = 5 mA, VCE = 10 V, f = 100 MHz

CB = 10 V, f = 1 MHz

V

f

T 125 – –

C

obo ––4

MHzTransition frequency

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2