Siemens SMBTA63, SMBTA64 Datasheet

PNP Silicon Darlington Transistors SMBTA 63

SMBTA 64

● High collector current

● High DC current gain

Type Ordering Code

SMBTA 63
SMBTA 64

Marking

s2U
s2V

(tape and reel)

Q68000-A2625
Q68000-A2485

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

SMBTA 63 SMBTA 64

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current I

CE0 V

30 30
30 30

EB0

10

10

500

CM 800

Base current IB 100
Peak base current IBM 200
Total power dissipation, T

S = 81 ˚C Ptot mW

360

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 280 K/W

th JS ≤ 210

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBTA 63

SMBTA 64

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 30 – –

C = 10 µA

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

CB = 30 V

V

Emitter cutoff current

EB = 10 V

V

DC current gain

C = 10 mA, VCE = 5 V SMBTA 63

1)

SMBTA 64

C = 100 mA, VCE = 5 V SMBTA 63

SMBTA 64

Collector-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

1)

1)

V

(BR)CB0 30 – –

V

(BR)EB0 10 – –

I

CB0 – – 100

I

EB0 – – 100

FE

h

5000
10000
10000
20000

–
–
–
–

–
–
–
–

VCEsat – – 1.5

VBEsat ––2

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–

V

AC characteristics

C = 50 mA, VCE = 5 V, f = 20 MHz

f

T 125 – –

MHzTransition frequency

1)

Pulse test conditions: t ≤ 300 µs, D = 2%.

Semiconductor Group 2