Siemens SMBTA56M Datasheet
SMBTA 56M
Semiconductor Group
Au -11-19981
PNP Silicon AF Transistor
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA 06M (NPN)
VPW05980
1
2
3
5
4
Type Marking Ordering Code Pin Configuration Package
4 n.c. 5 = CSMBTA 56M Q62702-A3474 1 = B 2 = C 3 = E SCT-595s2G
Maximum Ratings
Parameter
Symbol UnitValue
Collector-emitter voltage 80 V
V
CEO
V
CBO
80Collector-base voltage
4Emitter-base voltage
V
EBO
DC collector current
I
C
500 mA
Peak collector current
I
CM
1 A
I
B
100Base current mA
Peak base current
I
BM
200
P
tot
1 W
Total power dissipation,
T
S
≤ 95 °C
°C150Junction temperature
T
j
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
≤110
K/W
Junction - soldering point
R
thJS
≤55
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
SMBTA 56M
Semiconductor Group
Au -11-19982
Electrical Characteristics at
T
A
=25°C, unless otherwise specified
Parameter
ValuesSymbol Unit
typ. max.min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
80
V
(BR)CEO
-- V
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
- -80
V
(BR)CBO
V
(BR)EBO
4 --Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
V
Collector cutoff current
V
CB
= 80 V,
I
E
= 0
I
CBO
- - 100 nA
I
CBO
20Collector cutoff current
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
µA--
Collector cutoff current
V
CE
= 60 V,
I
B
= 0
- nA100-
I
CEO
DC current gain 1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
-
-
-
-
-
V
CEsat
- VCollector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 10 mA
0.25-
- 1.2Base-emitter voltage 1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE(ON)
- V
AC Characteristics
- 150 -Transition frequency
I
C
= 20 mA,
V
CE
= 5 V, f = 100 MHz
f
T
MHz
-Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
5 - pF
C
cb
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
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