Siemens SMBTA55, SMBTA56 Datasheet

PNP Silicon AF Transistors SMBTA 55

SMBTA 56

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: SMBTA 05, SMBTA 06 (NPN)

Type Ordering Code

SMBTA 55
SMBTA 56

Marking

s2H
s2G

(tape and reel)

Q68000-A3386
Q68000-A2882

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

SMBTA 55 SMBTA 56

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA

CE0 V

60 80
60 80

EB0

4

500
Peak collector current ICM A1
Base current IB mA100
Peak base current IBM 200
Total power dissipation, T

S = 79 ˚C Ptot mW

330

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 285 K/W

th JS ≤ 215

5.91

Electrical Characteristics

I

I

I

I

I

I
I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBTA 55

SMBTA 56

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA SMBTA 55

SMBTA 56

Collector-base breakdown voltage

C = 100 µA SMBTA 55

(BR)CB0

V

SMBTA 56

Emitter-base breakdown voltage

E = 10 µA

Collector-base cutoff current

V

(BR)EB0 4––

I

CB0

VCB = 60 V SMBTA 55

CB = 80 V SMBTA 56

V

CB = 60 V, TA = 150 ˚C SMBTA 55

V

CB = 80 V, TA = 150 ˚C SMBTA 56

V

CE = 60 V

V

DC current gain

C = 10 mA, VCE = 1 V
C = 100 mA, VCE = 1 V

Collector-emitter saturation voltage

C = 100 mA, IB = 10 mA

Base-emitter saturation voltage

C = 100 mA, VCE = 1 V

1)

1)

1)

I

CE0 – – 100

h

FE

VBE – – 1.2

60
80

60
80

–
–
–
–

100
100

–
–

–
–

–
–
–
–

–
130

–
–

–
–

100
100
20
20

–
170

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nACollector cutoff current

–

VVCEsat – – 0.25

AC characteristics

C = 20 mA, VCE = 5 V, f = 20 MHz

f

T – 100 –

MHzTransition frequency

C

CB = 10 V, f = 1 MHz

V

obo –12–

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2%.

Semiconductor Group 2