Siemens SMBTA42, SMBTA43 Datasheet
Semiconductor Group 1
NPN Silicon Transistors for High Voltages SMBTA 42
SMBTA 43
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBTA 42
SMBTA 43
Q68000-A6478
Q68000-A6482
s1D
s1E
SOT-23
B E C
1 2 3
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Parameter Symbol Values Unit
Emitter-base voltage VEB0
Collector-base voltage VCB0
Junction temperature Tj ˚C
Total power dissipation, T
S = 74 ˚C Ptot mW
Storage temperature range T
stg
Collector-emitter voltage VCE0 V
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 280 K/W
6
360
150
– 65 … + 150
300 200
SMBTA 42 SMBTA 43
Collector current IC mA500
Base current I
B 100
Junction - soldering point R
th JS ≤ 210
300 200
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: SMBTA 92, SMBTA 93 (PNP)
5.91
Semiconductor Group 2
SMBTA 42
SMBTA 43
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 1 mA, VCE = 10 V
I
C = 10 mA, VCE = 10 V
1)
I
C = 30 mA, VCE = 10 V
1)
SMBTA 42
SMBTA 43
VCollector-emitter breakdown voltage
I
C = 1 mA SMBTA 42
SMBTA 43
V
(BR)CE0
300
200
–
–
–
–
nA
nA
µA
µA
Collector-base cutoff current
VCB = 200 V SMBTA 42
V
CB = 160 V SMBTA 43
V
CB = 200 V, TA = 150 ˚C SMBTA 42
V
CB = 160 V, TA = 150 ˚C SMBTA 43
I
CB0
–
–
–
–
–
–
–
–
100
100
20
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Emitter-base breakdown voltage
I
E = 100 µA
V
(BR)EB0 6––
V
Collector-emitter saturation voltage
1)
I
C = 20 mA, IB = 2 mA SMBTA 42
SMBTA 43
VCEsat
–
–
–
–
0.5
0.4
–hFE
25
40
40
40
–
–
–
–
–
–
–
–
MHzTransition frequency
I
C = 10 mA, VCE = 20 V, f = 100 MHz
f
T 50 – –
AC characteristics
pFOutput capacitance
V
CB = 20 V, f = 1 MHz SMBTA 42
SMBTA 43
C
obo
–
–
–
–
3
4
Collector-base breakdown voltage
I
C = 100 µA SMBTA 42
SMBTA 43
V
(BR)CB0
300
200
–
–
–
–
nAEmitter-base cutoff current
V
EB = 3 V
I
EB0 – – 100
Base-emitter saturation voltage
1)
I
C = 20 mA, IB = 2 mA
VBEsat – – 0.9
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
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