Siemens SMBTA20 Datasheet

Semiconductor Group 1

NPN Silicon AF Transistor SMBTA 20

5.91

Maximum Ratings

Type Ordering Code

(tape and reel)

Marking

Package

1)

Pin Configuration

SMBTA 20 Q6800-A6477s1C SOT-23

B E C

1 2 3

Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Collector current IC 100 mA

Total power dissipation, T

S =71˚C

P

tot 330 mW

Junction temperature T

j 150 ˚C

Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 310 K/W

Junction - soldering point Rth JS ≤ 240

Emitter-base voltage VEB0 4

Peak collector current ICM 200
Peak base current IBM 200

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

● High DC current gain

● Low collector-emitter saturation voltage

Semiconductor Group 2

SMBTA 20

Electrical Characteristics

at T

A = 25 ˚C, unless otherwise specified.

UnitValues

Parameter Symbol

min. typ. max.

DC characteristics

VCollector-emitter breakdown voltage

I

C = 1 mA

V

(BR)CE0 40 – –

Emitter-base breakdown voltage

I

E = 100 µA

V

(BR)EB0 4––

nA

µA

Collector-base cutoff current

V

CB = 30 V

V

CB = 30 V, TA = 150 ˚C

I

CB0

–
–

–
–

100
20

–DC current gain

I

C = 5 mA, VCE = 10 V

h

FE 40 – 400

VCollector-emitter saturation voltage

1)

I

C = 10 mA, IB = 1 mA

V

CEsat – – 0.25

nAEmitter-base cutoff current

V

EB = 4 V

I

EB0 ––20

MHzTransition frequency

I

C = 20 mA, VCE = 5 V, f = 100 MHz

f

T 125 – –

pFOutput capacitance

V

CB = 10 V, f = 1 MHz

C

obo ––4

AC characteristics

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.