Siemens SMBTA13, SMBTA14 Datasheet

NPN Silicon Darlington Transistors SMBTA 13

SMBTA 14

● High DC current gain

● High collector current

● Collector-emitter saturation voltage

Type Ordering Code

SMBTA 13
SMBTA 14

Marking

s1M
s1N

(tape and reel)

Q68000-A6475
Q68000-A6476

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

30
30

10
Collector current IC mA300
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T

S = 81 ˚C Ptot mW

Junction temperature Tj ˚C

CM 500
B 100
BM 200

330
150

1)

Storage temperature range T

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 280 K/W

Junction - soldering point Rth JS ≤ 210

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBTA 13

SMBTA 14

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 30 – –

C = 10 µA

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

CB = 30 V

V

Emitter-base cutoff current

EB = 10 V

V

C = 10 mA, VCE = 5 V

1)

SMBTA 13
SMBTA 14

C = 100 mA, VCE = 5 V

1)

SMBTA 13
SMBTA 14

Collector-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

1)

1)

V

(BR)CB0 30 – –

V

(BR)EB0 10 – –

I

CB0 – – 100

I

EB0 – – 100

h

FE

5000
10000
10000
20000

–
–
–
–

–
–
–
–

VCEsat – – 1.5

VBEsat ––2

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–DC current gain

V

AC characteristics

C = 50 mA, VCE = 5 V, f = 20 MHz

f

T 125 – –

MHzTransition frequency

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2