NPN Silicon AF Transistors SMBTA 05
SMBTA 06
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: SMBTA 55
SMBTA 56 (PNP)
Type Ordering Code
SMBTA 05
SMBTA 06
Marking
s1H
s1G
(tape and reel)
Q68000-A3430
Q68000-A3428
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
SMBTA 05 SMBTA 06
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
CE0 V
60 80
60 80
EB0
4
500
Peak collector current ICM A1
Base current IB mA100
Peak base current IBM 200
Total power dissipation, T
S = 79 ˚C Ptot mW
330
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 285 K/W
th JS ≤ 215
5.91
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBTA 05
SMBTA 06
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA SMBTA 05
SMBTA 06
Collector-base breakdown voltage
C = 100 µA SMBTA 05
(BR)CB0
V
SMBTA 06
Emitter-base breakdown voltage
E = 10 µA
Collector-base cutoff current
V
(BR)EB0 4––
I
CB0
VCB = 60 V SMBTA 05
CB = 80 V SMBTA 06
V
CB = 60 V, TA = 150 ˚C SMBTA 05
V
CB = 80 V, TA = 150 ˚C SMBTA 06
V
CE = 60 V
V
DC current gain
C = 10 mA, VCE = 1 V
C = 100 mA, VCE = 1 V
Collector-emitter saturation voltage
C = 100 mA, IB = 10 mA
Base-emitter saturation voltage
C = 100 mA, VCE = 1 V
1)
1)
1)
I
CE0 – – 100
FE
h
VBE – – 1.2
60
80
60
80
–
–
–
–
100
100
–
–
–
–
–
–
–
–
–
130
–
–
–
–
100
100
20
20
–
170
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nACollector cutoff current
–
VVCEsat – – 0.25
AC characteristics
f
T – 100 –
C = 20 mA, VCE = 5 V, f = 20 MHz
CB = 10 V, f = 1 MHz
V
C
obo –12–
MHzTransition frequency
pFOutput capacitance
1)
Pulse test conditions: t ≤ 300 µs, D = 2%.
Semiconductor Group 2