Siemens SMBTA05, SMBTA06 Datasheet

NPN Silicon AF Transistors SMBTA 05

SMBTA 06

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: SMBTA 55

SMBTA 56 (PNP)

Type Ordering Code

SMBTA 05
SMBTA 06

Marking

s1H
s1G

(tape and reel)

Q68000-A3430
Q68000-A3428

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

SMBTA 05 SMBTA 06

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA

CE0 V

60 80
60 80

EB0

4

500
Peak collector current ICM A1
Base current IB mA100
Peak base current IBM 200
Total power dissipation, T

S = 79 ˚C Ptot mW

330

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 285 K/W

th JS ≤ 215

5.91

Electrical Characteristics

I

I

I

I

I

I
I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBTA 05

SMBTA 06

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA SMBTA 05

SMBTA 06

Collector-base breakdown voltage

C = 100 µA SMBTA 05

(BR)CB0

V

SMBTA 06

Emitter-base breakdown voltage

E = 10 µA

Collector-base cutoff current

V

(BR)EB0 4––

I

CB0

VCB = 60 V SMBTA 05

CB = 80 V SMBTA 06

V

CB = 60 V, TA = 150 ˚C SMBTA 05

V

CB = 80 V, TA = 150 ˚C SMBTA 06

V

CE = 60 V

V

DC current gain

C = 10 mA, VCE = 1 V
C = 100 mA, VCE = 1 V

Collector-emitter saturation voltage

C = 100 mA, IB = 10 mA

Base-emitter saturation voltage

C = 100 mA, VCE = 1 V

1)

1)

1)

I

CE0 – – 100

FE

h

VBE – – 1.2

60
80

60
80

–
–
–
–

100
100

–
–

–
–

–
–
–
–

–
130

–
–

–
–

100
100
20
20

–
170

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nACollector cutoff current

–

VVCEsat – – 0.25

AC characteristics

f

T – 100 –

C = 20 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

C

obo –12–

MHzTransition frequency

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2%.

Semiconductor Group 2