Siemens SMBT6427 Datasheet

NPN Silicon Darlington Transistor SMBT 6427

● For general amplifier applications

● High collector current

● High current gain

Type Ordering Code

SMBT 6427 Q68000-A8320s1V SOT-23

Marking

(tape and reel)

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Collector-base voltage VCB0 40
Emitter-base voltage VEB0 12
Collector current I

C 500 mA

Peak collector current ICM 800

tot 360 mW

Total power dissipation, T

S =74˚C

Junction temperature T
Storage temperature range T

P

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 280 K/W

Junction - soldering point Rth JS ≤ 210

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I
I
I

I
I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

SMBT 6427

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

C = 10 mA

Collector-base breakdown voltage

C = 100 µA

Emitter-base breakdown voltage, I

V

(BR)CE0 40 – –

V

(BR)CB0 40 – –

E = 10 µA V(BR)EB0 12 – –

VCollector-emitter breakdown voltage

Collector-base cutoff current

CB = 30 V, IE = 0

V

CB = 30 V, IE = 0, TA = 150 ˚C

V

CE = 30 V, IB = 0

V

EB = 10 V, IC = 0

V

C = 10 mA, VCE = 5 V
C = 100 mA, VCE = 5 V
C = 500 mA, VCE = 5 V

C = 50 mA, IB = 0.5 mA
C = 500 mA, IB = 0.5 mA

Base-emitter saturation voltage

C = 500 mA, IB = 0.5 mA

Base-emitter voltage

C = 50 mA, VCE = 5 V

1)

1)

CB0

I

–
–

I

CE0 ––1

I

EB0 ––50

–
–

50
10

hFE

10000
20000
14000

CEsat

V

–
–

V

BEsat – – 2.0

V

BE(on) – – 1.75

–
–
–

–
–

100000
200000
140000

1.2

1.5

nA

µA
µACollector cutoff current

nAEmitter-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

AC characteristics

C = 50 mA, VCE = 5 V, f = 100 MHz

CB = 10 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

C = 1 mA, VCE = 5 V, RS = 100 kΩ

f

T 130 – –

C

obo ––7

C

ibo ––25

NF ––10

MHzTransition frequency

pFOutput capacitance

dBNoise figure

f = 1 kHz to 15 kHz

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2