Siemens SMBT5086, SMBT5087 Datasheet

PNP Silicon Transistors SMBT 5086
SMBT 5087
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Type Ordering Code
SMBT 5086 SMBT 5087
Marking
s2P s2Q
(tape and reel)
Q62702-M0002 Q68000-A8319
Pin Configuration
1 2 3
B E C
SOT-23
Maximum Ratings Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V Collector-base voltage VCB0 Emitter-base voltage VEB0
50 50
3 Collector current IC mA50 Total power dissipation, T
S = 71 ˚C Ptot mW
Junction temperature Tj ˚C Storage temperature range T
stg
330 150
– 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA 310 K/W
th JS 240
5.91
Electrical Characteristics
I
I
I
I
I
I
I I
I
I
I R
I R
1)
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBT 5086
SMBT 5087
UnitValuesParameter Symbol
min. typ. max.
C = 1 mA
Collector-base breakdown voltage
C = 100 µA
Emitter-base breakdown voltage, I
V
(BR)CE0 50
V
(BR)CB0 50
E = 10 µA V(BR)EB0 3––
VCollector-emitter breakdown voltage
Collector-base cutoff current
CB = 10 V, IE = 0
V
CB = 35 V, IE = 0
V
CB = 35 V, IE = 0, TA = 150 ˚C
V
C = 100 µA, VCE = 5 V SMBT 5086
SMBT 5087
C = 1 mA, VCE = 5 V SMBT 5086
SMBT 5087
C = 10 mA, VCE = 5 V SMBT 5086
SMBT 5087
Collector-emitter saturation voltage
C = 10 mA, IB = 1 mA
Base-emitter saturation voltage
C = 10 mA, IB = 1 mA
1)
1)
ICB0
– – –
FE
h
150 250 150 250 150 250
– – –
– – – – – –
10 50 20
500 800 – – – –
VCEsat 0.3
VBEsat 0.85
nA nA
µA
DC current gain
V
AC characteristics
C = 0.5 mA, VCE = 5 V, f = 100 MHz
f
T 40
MHzTransition frequency
pFOutput capacitance, VCB = 5 V, f = 1 MHz Cobo ––4
fe
h
C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5086 C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5087
Noise figure
C = 100 µA, VCE = 5 V, f = 1 kHz,
S = 3 k SMBT 5086
SMBT 5087
C = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,
S = 10 k SMBT 5086
SMBT 5087
Pulse test conditions: t 300 µs, D 2%.
NF
150 250
– –
– –
– –
– –
– –
600 900
3 2
3 2
Small-signal current gain
dB dB
dB dB
Semiconductor Group 2
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