Siemens SMBT5086, SMBT5087 Datasheet
PNP Silicon Transistors SMBT 5086
SMBT 5087
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
Type Ordering Code
SMBT 5086
SMBT 5087
Marking
s2P
s2Q
(tape and reel)
Q62702-M0002
Q68000-A8319
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
50
50
3
Collector current IC mA50
Total power dissipation, T
S = 71 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
stg
330
150
– 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 310 K/W
th JS ≤ 240
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
R
I
R
1)
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBT 5086
SMBT 5087
UnitValuesParameter Symbol
min. typ. max.
C = 1 mA
Collector-base breakdown voltage
C = 100 µA
Emitter-base breakdown voltage, I
V
(BR)CE0 50 – –
V
(BR)CB0 50 – –
E = 10 µA V(BR)EB0 3––
VCollector-emitter breakdown voltage
Collector-base cutoff current
CB = 10 V, IE = 0
V
CB = 35 V, IE = 0
V
CB = 35 V, IE = 0, TA = 150 ˚C
V
C = 100 µA, VCE = 5 V SMBT 5086
SMBT 5087
C = 1 mA, VCE = 5 V SMBT 5086
SMBT 5087
C = 10 mA, VCE = 5 V SMBT 5086
SMBT 5087
Collector-emitter saturation voltage
C = 10 mA, IB = 1 mA
Base-emitter saturation voltage
C = 10 mA, IB = 1 mA
1)
1)
ICB0
–
–
–
FE
h
150
250
150
250
150
250
–
–
–
–
–
–
–
–
–
10
50
20
500
800
–
–
–
–
VCEsat – – 0.3
VBEsat – – 0.85
nA
nA
µA
–DC current gain
V
AC characteristics
C = 0.5 mA, VCE = 5 V, f = 100 MHz
f
T 40 – –
MHzTransition frequency
pFOutput capacitance, VCB = 5 V, f = 1 MHz Cobo ––4
fe
h
C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5086
C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5087
Noise figure
C = 100 µA, VCE = 5 V, f = 1 kHz,
S = 3 kΩ SMBT 5086
SMBT 5087
C = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,
S = 10 kΩ SMBT 5086
SMBT 5087
Pulse test conditions: t ≤ 300 µs, D ≤ 2%.
NF
150
250
–
–
–
–
–
–
–
–
–
–
600
900
3
2
3
2
–Small-signal current gain
dB
dB
dB
dB
Semiconductor Group 2
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