Siemens SMBT5086, SMBT5087 Datasheet

PNP Silicon Transistors SMBT 5086

SMBT 5087

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30 Hz and 15 kHz

Type Ordering Code

SMBT 5086
SMBT 5087

Marking

s2P
s2Q

(tape and reel)

Q62702-M0002
Q68000-A8319

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

50
50

3
Collector current IC mA50
Total power dissipation, T

S = 71 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

stg

330
150

– 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 310 K/W

th JS ≤ 240

5.91

Electrical Characteristics

I

I

I

I

I

I

I
I

I

I

I
R

I
R

1)

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBT 5086

SMBT 5087

UnitValuesParameter Symbol

min. typ. max.

C = 1 mA

Collector-base breakdown voltage

C = 100 µA

Emitter-base breakdown voltage, I

V

(BR)CE0 50 – –

V

(BR)CB0 50 – –

E = 10 µA V(BR)EB0 3––

VCollector-emitter breakdown voltage

Collector-base cutoff current

CB = 10 V, IE = 0

V

CB = 35 V, IE = 0

V

CB = 35 V, IE = 0, TA = 150 ˚C

V

C = 100 µA, VCE = 5 V SMBT 5086

SMBT 5087

C = 1 mA, VCE = 5 V SMBT 5086

SMBT 5087

C = 10 mA, VCE = 5 V SMBT 5086

SMBT 5087

Collector-emitter saturation voltage

C = 10 mA, IB = 1 mA

Base-emitter saturation voltage

C = 10 mA, IB = 1 mA

1)

1)

ICB0

–
–
–

FE

h

150
250
150
250
150
250

–
–
–

–
–
–
–
–
–

10
50
20

500
800
–
–
–
–

VCEsat – – 0.3

VBEsat – – 0.85

nA
nA

µA

–DC current gain

V

AC characteristics

C = 0.5 mA, VCE = 5 V, f = 100 MHz

f

T 40 – –

MHzTransition frequency

pFOutput capacitance, VCB = 5 V, f = 1 MHz Cobo ––4

fe

h

C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5086
C = 1 mA, VCE = 5 V, f = 1 kHz SMBT 5087

Noise figure

C = 100 µA, VCE = 5 V, f = 1 kHz,

S = 3 kΩ SMBT 5086

SMBT 5087

C = 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,

S = 10 kΩ SMBT 5086

SMBT 5087

Pulse test conditions: t ≤ 300 µs, D ≤ 2%.

NF

150
250

–
–

–
–

–
–

–
–

–
–

600
900

3
2

3
2

–Small-signal current gain

dB
dB

dB
dB

Semiconductor Group 2