Siemens SMBT4126 Datasheet

PNP Silicon Switching Transistor SMBT 4126

● High current gain: 0.1 mA to 100 mA

● Low collector-emitter saturation voltage

Type Ordering Code

SMBT 4126 Q68000-A8549sC3 SOT-23

Marking

(tape and reel)

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 25 V

Collector-base voltage VCB0 25
Emitter-base voltage VEB0 4
Collector current I
Total power dissipation, TS =71˚C
Junction temperature T
Storage temperature range T

C 200 mA

tot 330 mW

P

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 310 K/W

1)

Junction - soldering point Rth JS ≤ 240

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I
I

I

I

I

I
R

I

A = 25 ˚C, unless otherwise specified.

at T

SMBT 4126

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 25 – –

C = 1 mA

Collector-base breakdown voltage

C = 10 µA

Emitter-base breakdown voltage

E = 10 µA

CB = 20 V, IE = 0

V

Emitter-base cutoff current

EB = 3 V, IC = 0

V

C = 2 mA, VCE = 1 V
C = 50 mA, VCE = 1 V

C = 50 mA, IB = 5 mA

Base-emitter saturation voltage

C = 50 mA, IB = 5 mA

1)

1)

V

(BR)CB0 25 – –

V

(BR)EB0 4––

I

CB0 ––50

I

EB0 ––50

FE

h

120
60

V

CEsat – – 0.4

V

BEsat – – 0.95

–
–

360
–

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

AC characteristics

f

T 250 – –

C = 10 mA, VCE = 20 V, f = 100 MHz

CB = 5 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

C = 1 mA, VCE = 5 V, f = 1 kHz

C

obo – – 4.5

C

ibo ––10

h

fe 120 – 480

NF ––4

C = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz

S = 1 kΩ

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 2

MHzTransition frequency

pFOutput capacitance

–Small-signal current gain

dBNoise figure