Siemens SMBT4124 Datasheet

Semiconductor Group 1

NPN Silicon Switching Transistor SMBT 4124

Maximum Ratings

Type Ordering Code

(tape and reel)

Marking

Package

1)

Pin Configuration

SMBT 4124 Q68000-A8316sZC SOT-23

B E C

1 2 3

Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 25 V

Collector-base voltage VCB0 30

Collector current I

C 200 mA

Total power dissipation, TS =69˚C

P

tot 330 mW

Junction temperature T

j 150 ˚C

Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 315 K/W

Junction - soldering point Rth JS ≤ 245

Emitter-base voltage VEB0 5

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

● High current gain: 0.1 mA to 100 mA

● Low collector-emitter saturation voltage

5.91

Semiconductor Group 2

SMBT 4124

Electrical Characteristics

at T

A = 25 ˚C, unless otherwise specified.

UnitValues

Parameter Symbol

min. typ. max.

DC characteristics

VCollector-emitter breakdown voltage

I

C = 1 mA

V

(BR)CE0 25 – –

Collector-base breakdown voltage

I

C = 10 µA

V

(BR)CB0 30 – –

Emitter-base breakdown voltage

I

E = 10 µA

V

(BR)EB0 5––

nACollector-base cutoff current

V

CB = 20 V, IE = 0

I

CB0 ––50

–DC current gain

I

C = 2 mA, VCE = 1 V

I

C = 50 mA, VCE = 1 V

h

FE

120
60

–
–

360
–

VCollector-emitter saturation voltage

1)

I

C = 50 mA, IB = 5 mA

V

CEsat – – 0.3

Base-emitter saturation voltage

1)

I

C = 50 mA, IB = 5 mA

V

BEsat – – 0.95

Emitter-base cutoff current

V

EB = 3 V, IC = 0

I

EB0 ––50

MHzTransition frequency

I

C = 10 mA, VCE = 20 V, f = 100 MHz

f

T 300 – –

pFOutput capacitance

V

CB = 5 V, f = 1 MHz

C

obo ––4

AC characteristics

Input capacitance

V

EB = 0.5 V, f = 1 MHz

C

ibo ––8

dBNoise figure

I

C = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz

R

S = 1 kΩ

NF ––5

–Small-signal current gain

I

C = 1 mA, VCE = 5 V, f = 1 kHz

h

fe 120 – 480

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.