Siemens SMBT3904S Datasheet

SMBT 3904S

Semiconductor Group

Sep-07-19981

NPN Silicon Switching Transistor Array

• High DC current gain: 0.1mA to 100mA

• Low collector-emitter saturation voltage

• Two ( galvanic) internal isolated Transistors

with high matching in one package

• Complementary type: SMBT 3906S (PNP)

VPS05604

6

3

1

5

4

2

Type Marking Ordering Code PackagePin Configuration

1/4=E1/E2s1ASMBT 3904S 2/5=B1/B2 3/6=C2/C1 SOT-363Q62702-A1201

Maximum Ratings

UnitParameter Symbol Value

Collector-emitter voltage

V

CEO

V40

60Collector-base voltage

V

CBO

Emitter-base voltage 6

V

EBO

DC collector current

I

C

mA200

250 mW

Total power dissipation,

T

S

= 115 °C

P

tot

°C

T

j

Junction temperature 150
Storage temperature

T

st

g

- 65...+150

Thermal Resistance

Junction ambient

1)

R

thJA

≤275

K/W

Junction - soldering point

R

thJS

≤140

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

SMBT 3904S

Semiconductor Group

Sep-07-19982

Electrical Characteristics at

T

A

=25°C, unless otherwise specified.

Parameter Symbol UnitValues

typ. max.min.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 1 mA,

I

B

= 0

V

(BR)CEO

V40 - -

Collector-base breakdown voltage

I

C

= 10 µA,

I

B

= 0

V

(BR)CBO

60 - -

V

(BR)EBO

- -6Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

Collector cutoff current

V

CB

= 30 V,

I

E

= 0

nA

I

CBO

- - 50

DC current gain 1)

I

C

= 100 µA,

V

CE

= 1 V

I

C

= 1 mA,

V

CE

= 1 V

I

C

= 10 mA,

V

CE

= 1 V

I

C

= 50 mA,

V

CE

= 1 V

I

C

= 100 mA,

V

CE

= 1 V

h

FE

40
70

100

60

30

-

-

-

-

-

-

-

300

-

-

-

Collector-emitter saturation voltage1)

I

C

= 10 mA,

I

B

= 1 mA

I

C

= 50 mA,

I

B

= 5 mA

V

CEsat

-

-

-

-

0.2

0.3

V

Base-emitter saturation voltage 1)

I

C

= 10 mA,

I

B

= 1 mA

I

C

= 50 mA,

I

B

= 5 mA

V

BEsat

0.65

-

-

-

0.85

0.95

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 2 1998-11-01

SMBT 3904S

Semiconductor Group

Sep-07-19983

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter ValuesSymbol Unit

max.typ.min.

AC Characteristics

f

T

300 - MHz-Transition frequency

I

C

= 10 mA,

V

CE

= 20 V, f = 100 MHz

C

cb

- -Collector-base capacitance

V

CB

= 5 V, f = 1 MHz

pF4

C

eb

- - 8Emitter-base capacitance

V

EB

= 0.5 V, f = 1 MHz

h

11e

1 10-Short-circuit input impedance

I

C

= 1 mA,

V

CE

= 10 V, f = 1 kHz

kΩ

h

12e

0.5 8 10

-4

-Open-circuit reverse voltage transfer ratio

I

C

= 1 mA,

V

CE

= 10 V, f = 1 kHz

h

21e

100 -Short-circuit forward current transfer ratio

I

C

= 1 mA,

V

CE

= 10 V, f = 1 kHz

-400

h

22e

1 - 40

µs

Open-circuit output admittance

I

C

= 1 mA,

V

CE

= 10 V, f = 1 kHz

Noise figure

I

C

= 100 µA,

V

CE

= 5 V,

R

S

= 1 kΩ,

f

= 1 kHz, ∆ f = 200 Hz

F

- - 5 dB

Delay time

V

CC

= 3 V,

I

C

= 10 mA,

I

B1

= 1 mA,

V

BE(off)

= 0.5 V

t

d

- - 35 ns

Rise time

V

CC

= 3 V,

I

C

= 10 mA,

I

B1

= 1 mA,

V

BE(off)

= 0.5 V

t

r

- - 35

Storage time

V

CC

= 3 V,

I

C

= 10 mA,

I

B1

=

I

B2

= 1mA

t

stg

- - 200

Fall time

V

CC

= 3 V,

I

C

= 10 mA,

I

B1

=

I

B2 =

1mA

t

f

- - 50

Semiconductor Group 3 1998-11-01