Siemens SMBT2907, SMBT2907A Datasheet

Semiconductor Group 1

PNP Silicon Switching Transistors SMBT 2907

SMBT 2907 A

Maximum Ratings

Type Ordering Code

(tape and reel)

Marking

Package

1)

Pin Configuration

SMBT 2907
SMBT 2907 A

Q68000-A6501
Q68000-A6474

s2B
s2F

SOT-23

1 2 3

B E C

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 V

Collector current IC mA

Junction temperature Tj ˚C

Total power dissipation, T

S = 77 ˚C Ptot mW

Storage temperature range T

stg

Collector-base voltage VCB0

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 290 K/W

600
330
150

– 65 … + 150

Emitter-base voltage V

EB0

40 60

SMBT 2907 SMBT 2907 A

Junction - soldering point Rth JS ≤ 220

60

5

● High DC current gain: 0.1 mA to 500 mA

● Low collector-emitter saturation voltage

● Complementary types: SMBT 2222,

SMBT 2222 A (NPN)

5.91

Semiconductor Group 2

SMBT 2907

SMBT 2907 A

Electrical Characteristics

at T

A = 25 ˚C, unless otherwise specified.

Base-emitter saturation voltage

1)

I

C = 150 mA, IB = 15 mA

I

C = 500 mA, IB = 50 mA

Collector-emitter saturation voltage

1)

I

C = 150 mA, IB = 15 mA

I

C = 500 mA, IB = 50 mA

VCollector-emitter breakdown voltage

I

C = 10 mA SMBT 2907

SMBT 2907 A

V

(BR)CE0

40
60

–
–

–
–

UnitValuesParameter Symbol

min. typ. max.

DC characteristics

Collector-base breakdown voltage

I

C = 10 µA SMBT 2907

SMBT 2907 A

V

(BR)CB0

60
60

–
–

–
–

Emitter-base breakdown voltage

I

E = 10 µA

V

(BR)EB0 5––

nAEmitter cutoff current

V

EB = 3 V

I

EB0 ––10

nA
nA

µA
µA

Collector cutoff current

VCB = 50 V SMBT 2907
V

CB = 50 V SMBT 2907 A

V

CB = 50 V, TA = 150 ˚C SMBT 2907

V

CB = 50 V, TA = 150 ˚C SMBT 2907 A

I

CB0

–
–
–
–

–
–
–
–

20
10
20
10

–

DC current gain

1)

I

C = 100 µA, VCE = 10 V SMBT 2907

SMBT 2907 A

I

C = 1 mA, VCE = 10 V SMBT 2907

SMBT 2907 A

I

C = 10 mA, VCE = 10 V

1)

SMBT 2907
SMBT 2907 A

I

C = 150 mA, VCE = 10 V

1)

SMBT 2907
SMBT 2907 A

I

C = 500 mA, VCE = 10 V

1)

SMBT 2907
SMBT 2907 A

h

FE

35
75
50
100
75
100
100
100
30
50

–
–
–
–
–
–
–
–
–
–

–
–
–
–
–
–
300
300
–
–

VVCEsat
–
–

–
–

0.4

1.6

VBEsat

–
–

–
–

1.3

2.6

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.