Siemens SMBD914 Datasheet
Silicon Switching Diode SMBD 914
● For high-speed switching applications
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
SMBD 914 Q68000-A625s5D SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 70 V
Peak reverse voltage VRM 100
Forward current IF 250 mA
Surge forward current, t= 1
Total power dissipation, T
µs IFS 4.5 A
S =54˚C Ptot 370 mW
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 330 K/W
Junction - soldering point Rth JS ≤ 260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
SMBD 914
UnitValuesParameter Symbol
min. typ. max.
(BR) = 100 µA
F =100 mA
Reverse current
R = 20 V
V
R = 75 V
V
R = 20 V; TA = 150 ˚C
V
R = 75 V; TA = 150 ˚C
V
AC characteristics
R = 0, f = 1 MHz
V
F = 10 mA, IR = 10 mA
R = 1 V, RL = 100 Ω
V
measured at I
R = 1 mA
Test circuit for reverse recovery time
V
(BR) 100 – –
V
F ––1
I
R
–
–
–
–
C
D ––2
–
–
–
–
25
5
30
50
trr ––4
VBreakdown voltage
VForward voltage
nA
µA
µA
µA
pFDiode capacitance
nsReverse recovery time
Pulse generator: t
p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
Semiconductor Group 2
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