Siemens SMBD914 Datasheet

Silicon Switching Diode SMBD 914

● For high-speed switching applications

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

SMBD 914 Q68000-A625s5D SOT-23

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 70 V

Peak reverse voltage VRM 100
Forward current IF 250 mA
Surge forward current, t= 1
Total power dissipation, T

µs IFS 4.5 A

S =54˚C Ptot 370 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 330 K/W

Junction - soldering point Rth JS ≤ 260

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

SMBD 914

UnitValuesParameter Symbol

min. typ. max.

(BR) = 100 µA

F =100 mA

Reverse current

R = 20 V

V

R = 75 V

V

R = 20 V; TA = 150 ˚C

V

R = 75 V; TA = 150 ˚C

V

AC characteristics

R = 0, f = 1 MHz

V

F = 10 mA, IR = 10 mA

R = 1 V, RL = 100 Ω

V

measured at I

R = 1 mA

Test circuit for reverse recovery time

V

(BR) 100 – –

V

F ––1

I

R

–
–
–
–

C

D ––2

–
–
–
–

25
5
30
50

trr ––4

VBreakdown voltage

VForward voltage

nA

µA
µA
µA

pFDiode capacitance

nsReverse recovery time

Pulse generator: t

p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C

Semiconductor Group 2