Siemens SMBD7000 Datasheet
Silicon Switching Diode Array SMBD 7000
● For high-speed switching applications
● Connected in series
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
SMBD 7000 Q68000-A8440s5C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 100 V
Peak reverse voltage VRM 100
Forward current IF 200 mA
Surge forward current, t= 1
Total power dissipation, T
µs IFS 4.5 A
S =31˚C Ptot 330 mW
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
1)
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SMBD 7000
Parameter Symbol
DC characteristics
VF
F = 1mA
F = 10 mA
F = 100 mA
Reverse current
R = 50 V
V
R = 100 V
V
R = 50 V, TA = 125 ˚C
V
IR
AC characteristics
C
D ––2
R = 0, f = 1 MHz
V
t
rr ––15
F = 10 mA, IR = 10 mA, RL = 100 Ω
min. typ. max.
550
670
750
–
–
–
–
–
–
–
–
–
700
820
1100
300
500
100
UnitValues
VBreakdown voltage V(BR) 100 – –
mVForward voltage
nA
nA
µA
pFDiode capacitance
nsReverse recovery time
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
Semiconductor Group 2
Loading...