Siemens SMBD6050 Datasheet

Silicon Switching Diode SMBD 6050
For high-speed switching applications
Type Ordering Code
Marking
Package
(tape and reel)
SMBD 6050 Q68000-A8439s5A SOT-23
Maximum Ratings Parameter Symbol Values Unit
Reverse voltage V
R 70 V
Peak reverse voltage VRM 70 Forward current IF 250 mA Surge forward current, t= 1 Total power dissipation, T
µs IFS 4.5 A
S =54˚C Ptot 370 mW
Junction temperature Tj 150 ˚C Storage temperature range T
stg – 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA 330 K/W
Junction - soldering point Rth JS 260
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I I
A = 25 ˚C, unless otherwise specified.
at T
SMBD 6050
Parameter Symbol
DC characteristics
V
(BR) 70
(BR) = 100 µA
F
V
F = 1mA F = 100 mA
I
R 100
VR = 50 V
AC characteristics
C
D 2.5
R = 0, f = 1 MHz
V
rr ––10
t
F = 10 mA, IR = 10 mA, RL = 100
measured at I
R = 1 mA
min. typ. max.
550 850
– –
700 1100
UnitValues
VBreakdown voltage
mVForward voltage
nAReverse current
pFDiode capacitance
nsReverse recovery time
Test circuit for reverse recovery time
Pulse generator: t
p = 100 ns, D = 0.05 Oscillograph: R = 50 r = 0.6 ns, Rj = 50 tr = 0.35 ns
t
1pF
C
Semiconductor Group 2
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