Silicon Switching Diode Array SMBD 2835
SMBD 2836
● For high-speed switching applications
● Common anode
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
SMBD 2835
SMBD 2836
sA3
sA2
Q68000-A8547
Q68000-A8436
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
SMBD 2835 SMBD 2836
Reverse voltage V
Peak reverse voltage VRM 35
R 30 V
50
75
Forward current IF 200 mA
Surge forward current, t= 1
Total power dissipation, T
µs IFS 4.5 A
S =31˚C Ptot 330 mW
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
1)
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 500 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SMBD 2835
SMBD 2835
SMBD 2836
Parameter Symbol
DC characteristics
(BR)
V
(BR) = 100 µA SMBD 2835
SMBD 2836
VF
F = 10 mA
F = 50 mA
F = 100 mA
R
I
R = 30 V SMBD 2835
V
R = 50 V SMBD 2836
V
AC characteristics
C
D ––4
R = 0, f = 1 MHz
V
min. typ. max.
35
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
855
1000
1200
100
100
UnitValues
VBreakdown voltage
mVForward voltage
nAReverse current
pFDiode capacitance
nsReverse recovery time
F = 10 mA, IR = 10 mA, RL = 100 Ω
measured at I
R = 1 mA
rr ––6
t
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
Semiconductor Group 2
SMBD 2835
SMBD 2836
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current I
A = 25 ˚C
T
F = f (VF)
Peak forward current I
A = 25 ˚C
T
FM = f (t)
Semiconductor Group 3
Forward voltage VF = f (TA)
SMBD 2835
SMBD 2835
SMBD 2836
Semiconductor Group 4
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