Siemens IL217AT, IL216AT, IL215AT Datasheet

IL215AT/216AT/217AT

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

FEATURES

• High Current Transfer Ratio, I

IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum

• Isolation Voltage, 2500 VAC

RMS

=1 mA

F

• Electrical Specifications Similar to

Standard 6 Pin Coupler

• Industry Standard SOIC-8 Surface

Mountable Package

• Standard Lead Spacing, .05"

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

• Underwriters Lab File #E52744

(Code Letter P)

DESCRIPTION

The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through­holes requirements, this package conforms to
standards for surface mounted devices.

The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.

Maximum Ratings

Emitter

Peak Reverse Voltage............................................ 6.0 V

Continuous Forward Current ...............................60 mA

Power Dissipation at 25°C .................................. 90 mW

Derate Linearly from 25°C ............................ 1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ..................... 30 V

Emitter-Collector Breakdown Voltage ....................... 7 V

Collector-Base Breakdown Voltage ........................ 70 V

Power Dissipation ............................................. 150 mW

Derate Linearly from 25°C ............................ 2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ........................................... 280 mW

Derate Linearly from 25°C ............................ 3.3 mW/°C

Storage Temperature .......................... –55°C to +150°C

Operating Temperature ...................... –55°C to +100°C

Soldering Time at 260°C .................................... 10 sec.

Package Dimensions in Inches (mm)

.240

(6.10)

.120±.005

(3.05±.13)

Pin One ID

.004 (.10)
.008 (.20)

.192±.005
(4.88±.13)

.050 (1.27)

.021 (.53)

.154±.005

C

L

(3.91±.13)

.016 (.41)

typ.

TOLERANCE: ±.005 (unless otherwise noted)

.015±.002

(.38±.05)

.008 (.20)

.020±.004

(.15±.10)

2 plcs.

Anode

Cathode

NC
NC

1
2
3
4

40°

5° max.

R.010
(.25) max.

7°

.058±.005

(1.49±.13)

Characteristics (TA=25°C)

Emitter

Forward Voltage V
Reverse Current I
Capacitance C

Detector

Breakdown Voltage

Collector-Emitter BV
Emitter-Collector BV

Collector-Emitter V

Dark Current I

Collector-Emitter

Capacitance C

Package

DC Current Transfer CTR

IL215AT 20 50
IL216AT 50 80
IL217AT 100 130

Collector-Emitter I

Saturation Voltage V

Isolation Test

Voltage V

Capacitance,

Input to Output C

Resistance,

Input to Output R

Switching Time t

Specifications subject to change.

Symbol Min. Typ. Max. Unit Condition

F

R

O

CEO

ECO

CEOdark

CE

DC

CE sat

IO

IO

IO

, t

ON

OFF

1.0 1.5 V IF=1 mA

0.1 100 µAV
25 pF VR=0

30 V I
7VI

550nA IF =0

10 pF VCE=0

%I

0.4 IF=1 mA

2500 VAC

RMS

0.5 pF

100 GΩ

3.0 µsI

8

NC

7

Base

6

Collector

5

Emitter

.125±.005
(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

=6.0 V

R

=10 µA

C

=10 µA

E

=10 V,

CE

=1 mA

F

=5 V

V

CE

=0.1 mA,

C

=2 mA,

C

=100 Ω,

R

E

V

=10 V

CE

Semiconductor Group 4–7

10.95

Figure 1. Forward voltage versus forward current

V

C

C

C

C

V

V

1.4

1.3

1.2

1.1

1.0

0.9

0.8

VF - Forward Voltage - V

0.7

IF - Forward Current - mA

Figure 3. Collector-emitter current
versus LED current

150

Ta = 25°

100

Ta = -55°C

Ta = 25°C

Ta = 85°C

Vce = 10

Figure 2. Normalized non-saturated and
saturated CTRce versus LED current

1.5
Normalized to:

Vce = 10 V
IF = 10 mA

1.0

Ta = 25°C

0.5

NCTRce - Normalized CTRce

100101.1

0.0
.1110100

Figure 4. Normalized collector-base
photocurrent versus LED current

100

Normalized to:

IF - LED Current - mA

Vce = 5 V

Vce = 0.4 V

Vcb = 9.3 V
IF = 1 mA

10

Ta = 25 °C

50

Current - mA

Ice - Collector-emitter

0

.1 1 10 100

IF - LED Current - mA

Figure 5. Collector-base photocurrent versus
LED current

Vce = 0.4 V

1000

Ta = 25°C
Vcb = 9.3 V

100

10

1

.1

.1110100

Icb - Collector-base Current - µA

Figure 7. Normalized saturated HFE versus
base current and temperature

2.0

25°

1.5

1.0

IF - LED Current - mA

70°

50°

Normalized to:

Ib = 20µA
Vce = 10
Ta = 25 °C

1

NIcb - Normalized Icb

.1

.1 1 10 100

IF - LED Current - mA

Figure 6. Collector-emitter leakage current
versus temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

10

Ta - Ambient Temperature - °C

Figure 8. Normalized non-saturated and
saturated CTRce versus LED current

2.0

Normalized to:

Ta = 25 °C
Vce = 5 V

1.5

IF = 1 mA

1.0

Vce = 10V

TYPICAL

100806040200-20

Vce = 5

Vce = 0.4 V

0.5

Saturated HFE

NHFE(sat) - Normalized

0.0
1 10 100 1000

Ib - Base Current - µA

0.5

0.0

NCTRce - Normalized CTRce

.1 1 10 100

IF - LED Current - mA

Vce = .4 V

Semiconductor Group 4–8