Siemens HYS64V4120GU-10, HYS72V4120GU-10 Datasheet

3.3V 4M x 64-Bit 2 BANK SDRAM Module

3.3V 4M x 72-Bit 2 BANK SDRAM Module

HYS64V4120GU-10 HYS72V4120GU-10

168 pin unbuffered DIMM Modules

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

• 2 bank 4M x 64, 4M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• Fully PC66 layout compatible

• JEDEC standard Synchronous DRAMs (SDRAM)

• Performance:

-10

Max. Clock frequency 66 MHz @ CL=2

100 MHz @ CL=3

Max. access time from clock 9 ns @ CL=2

8 ns @ CL=3

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E

• Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• Gold contact pad

• Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU

PROM

Semiconductor Group 1

1 2.98

HYS64(72)V4120GU-10

4M x 64/72 SDRAM-Module

The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72 organisation. Decoupling capacitors are mounted on the PC board.

The DIMMs have a serial presence detect, implemented with a serial E protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.

All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint. This SDRAM module is available with a board-height of 1,15“.

Ordering Information

Type Package Descriptions Module

HYS 64V4120GU-10 L-DIM-168-25 PC66 4M x 64 2 bank SDRAM module 1,15“ HYS 72V4120GU-10 L-DIM-168-25 PC66 4M x 72 2 bank SDRAM module 1,15“

PROM using the two pin I2C

Height

Pin Names

A0-A10 Address Inputs( RA0 ~ RA10 / CA0 ~ CA8) BS (A11) Bank Select DQ0 - DQ63 Data Input/Output CB0-CB7 Check Bits (x72 organisation only) RAS CAS WE

, CKE1 Clock Enable

CKE0 CLK0 - CLK3 Clock Input DQMB0 - DQMB7 Data Mask

- CS3 Chip Select

CS0 Vcc Power (+3.3 Volt) Vss Ground SCL Clock for Presence Detect SDA Serial Data Out for Presence Detect N.C. No Connection

Row Address Strobe Column Address Strobe Read / Write Input

Address Format:

Part Number Rows Columns Bank Select Refresh Period Interval 4M x 64 HYS 64V4120GU 11 9 1 4k 64 ms 15,6 µs 4M x 72 HYS 72V4120GU 11 9 1 4k 64 ms 15,6 µs

Semiconductor Group 2

HYS64(72)V4120GU-10

4M x 64/72 SDRAM-Module

Pin Configuration

PIN # Symbol PIN # Symbol PIN # Symbol PIN # Symbol

1 VSS 43 VSS 85 VSS 127 VSS 2 DQ0 44 DU 86 DQ32 128 CKE0 3 DQ1 45 CS2 87 DQ33 129 CS3 4 DQ2 46 DQMB2 88 DQ34 130 DQMB6 5 DQ3 47 DQMB3 89 DQ35 131 DQMB7 6 VCC 48 DU 90 VCC 132 NC 7 DQ4 49 VCC 91 DQ36 133 VCC 8 DQ5 50 NC 92 DQ37 134 NC 9 DQ6 51 NC 93 DQ38 135 NC 10 DQ7 52 NC (CB2) 94 DQ39 136 CB6 11 DQ8 53 NC (CB3) 95 DQ40 137 CB7 12 VSS 54 VSS 96 VSS 138 VSS 13 DQ9 55 DQ16 97 DQ41 139 DQ48 14 DQ10 56 DQ17 98 DQ42 140 DQ49 15 DQ11 57 DQ18 99 DQ43 141 DQ50 16 DQ12 58 DQ19 100 DQ44 142 DQ51 17 DQ13 59 VCC 101 DQ45 143 VCC 18 VCC 60 DQ20 102 VCC 144 DQ52 19 DQ14 61 NC 103 DQ46 145 NC 20 DQ15 62 DU 104 DQ47 146 DU 21 NC (CB0) 63 CKE1 105 NC (CB4) 147 NC 22 NC (CB1) 64 VSS 106 NC (CB5) 148 VSS 23 VSS 65 DQ21 107 VSS 149 DQ53 24 NC 66 DQ22 108 NC 150 DQ54 25 NC 67 DQ23 109 NC 151 DQ55 26 VCC 68 VSS 110 VCC 152 VSS 27 WE 69 DQ24 111 CAS 153 DQ56 28 DQMB0 70 DQ25 112 DQMB4 154 DQ57 29 DQMB1 71 DQ26 113 DQMB5 155 DQ58 30 CS0 72 DQ27 114 CS1 156 DQ59 31 DU 73 VCC 115 RAS 157 VCC 32 VSS 74 DQ28 116 VSS 158 DQ60 33 A0 75 DQ29 117 A1 159 DQ61 34 A2 76 DQ30 118 A3 160 DQ62 35 A4 77 DQ31 119 A5 161 DQ63 36 A6 78 VSS 120 A7 162 VSS 37 A8 79 CLK2 121 A9 163 CLK3 38 A10 80 NC 122 A11=BS 164 NC 39 NC 81 NC 123 NC 165 SA0 40 VCC 82 SDA 124 VCC 166 SA1 41 VCC 83 SCL 125 CLK1 167 SA2 42 CLK0 84 VCC 126 NC 168 VCC

Note : Pinnames in brackets are for the x72 ECC versions

Semiconductor Group 3

CS1 CS0 DQMB0

DQM

DQMB4

HYS64(72)V4120GU-10

4M x 64/72 SDRAM-Module

DQM

DQ0-DQ7

DQMB1 DQ8-DQ15

CB0-CB7

CS3

CS2

DQMB2 DQ16-DQ23

DQMB3 DQ24-DQ31

DQ0-DQ7

DQM DQ0-DQ7

D16

DQM DQ0-DQ7

DQ0-DQ7

DQM DQ0-DQ7

DQM

DQ0-DQ7

D17

DQM DQ0-DQ7

D10

DQM DQ0-DQ7

D11

DQ32-DQ39

DQMB5 DQ40-DQ47

DQMB6 DQ48-DQ55

DQMB7 DQ56-DQ63

DQ0-DQ7

DQM DQ0-DQ7

E2PROM (256wordx8bit)

DQ0-DQ7

DQM DQ0-DQ7

D12

D13

D14

D15

A0-A10,BS VDD VSS

, CAS, WE

RAS

CKE0

CKE1

Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ohms except otherwise noted.

C1-C15,(C16,C17)

VDD

10k

D0 - D15,(D16,D17)

D0 - D15,(D16,D17) D0 - D7,(D8)

D0 - D15,(D16,D17)

D0 - D7,(D16)

D9 - D15,(D17)

CLK0

CLK2

SA0 SA1 SA2

2 SDRAMs 2 SDRAMs

SA0 SA1 SA2

CLK1

CLK3

SCL SDA

Block Diagram for 4M x 64/72 SDRAM DIMM modules (HYS64/72V4120GU)

Semiconductor Group 4

2 (3) SDRAMs 2 SDRAMs

2 (3) SDRAMs

2 SDRAMs

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