Siemens HYS64V2200GU-10, HYS64V2200GU-8, HYS64V2200GU-8-3, HYS64V4220GU-8, HYS72V2200GU-10 Datasheet
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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HYS64/72V2200GU-8/-10
HYS64/72V4220GU-8/-10
168 pin unbuffered DIMM Modules
• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
• SDRAM Performance:
-8 -8-3 -10 Units
f
CK
t
AC
Clock frequency (max.) 100 100 66 MHz
Clock access time 6 6 8 ns
• Programmed Latencies :
Product Speed CL tRCD tRP
-8 PC100 2 2 2
-8-3 PC100 3 2 3
-10 PC66 2 2 2
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
2
PROM
Semiconductor Group 1
1 6.98
HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory Modules
(DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed
memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs
use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. Modules which
use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The
PC board design is according to INTEL’s PC SDRAM Rev.1.0 module specification.
2
The DIMMs have a serial presence detect, implemented with a serial E
first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.
All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint,
with 1,25“ ( 31,75 mm) height
Ordering Information
Type Ordering Code Package Descriptions Module
HYS 64V2200GU-8 PC100-222-620 L-DIM-168-29
HYS 72V2200GU-8 PC100-222-620 L-DIM-168-29
HYS 64V4220GU-8 PC100-222-620 L-DIM-168-29
HYS 72V4220GU-8 PC100-222-620 L-DIM-168-29
HYS 64V2200GU-8-3 PC100-323-620 L-DIM-168-29
HYS 72V2200GU-8-3 PC100-323-620 L-DIM-168-29
HYS 64V4220GU-8-3 PC100-323-620 L-DIM-168-29
HYS 72V4220GU-8-3 PC100-323-620 L-DIM-168-29
HYS 64V2200GU-10 PC66-222-920 L-DIM-168-29
HYS 72V2200GU-10 PC66-222-920 L-DIM-168-29
HYS 64V4220GU-10 PC66-222-920 L-DIM-168-29
HYS 72V4220GU-10 PC66-222-920 L-DIM-168-29
100 Mhz 2M x 64 1 bank SDRAM module
100 MHz 2M x 72 1 bank SDRAM module
100 Mhz 4M x 64 2 bank SDRAM module
100 Mhz 4M x 72 2 bank SDRAM module
100 Mhz 2M x 64 1 bank SDRAM module
100 MHz 2M x 72 1 bank SDRAM module
100 Mhz 4M x 64 2 bank SDRAM module
100 Mhz 4M x 72 2 bank SDRAM module
66 Mhz 2M x 64 1 bank SDRAM module
66 MHz 2M x 72 1 bank SDRAM module
66 Mhz 4M x 64 2 bank SDRAM module
66 Mhz 4M x 72 2 bank SDRAM module
PROM using the two pin I2C protocol. The
Height
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
1,25“
Pin Names
A0-A10 Address Inputs CLK0 - CLK3 Clock Input
BA Bank Address DQMB0 - DQMB7 Data Mask
DQ0 - DQ63 Data Input/Output CS0 - CS3 Chip Select
CB0-CB7 Check Bits (x72
Vcc Power (+3.3 Volt)
organisation only)
RAS
CAS
WE
CKE0, CKE1
Row Address Strobe Vss Ground
Column Address Strobe SCL Clock for Presence Detect
Read / Write Input SDA Serial Data Out for Presence Detect
Clock Enable N.C. No Connection
Address Format:
Part Number Rows Columns Banks Refresh Period Interval
2M x 64 HYS 64V2200GU 11 9 1 4k 64 ms 15,6 µs
2M x 72 HYS 72V2200GU 11 9 1 4k 64 ms 15,6 µs
4M x 64 HYS 64V4220GU 11 9 1 4k 64 ms 15,6 µs
4M x 72 HYS 72V4220GU 11 9 1 4k 64 ms 15,6 µs
Semiconductor Group 2
HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
Pin Configuration
PIN # Symbol PIN # Symbol PIN # Symbol PIN # Symbol
1 VSS 43 VSS 85 VSS 127 VSS
2 DQ0 44 DU 86 DQ32 128 CKE0
3 DQ1 45 CS2 87 DQ33 129 CS3
4 DQ2 46 DQMB2 88 DQ34 130 DQMB6
5 DQ3 47 DQMB3 89 DQ35 131 DQMB7
6 VCC 48 DU 90 VCC 132 NC
7 DQ4 49 VCC 91 DQ36 133 VCC
8 DQ5 50 NC 92 DQ37 134 NC
9 DQ6 51 NC 93 DQ38 135 NC
10 DQ7 52 NC (CB2) 94 DQ39 136 CB6
11 DQ8 53 NC (CB3) 95 DQ40 137 CB7
12 VSS 54 VSS 96 VSS 138 VSS
13 DQ9 55 DQ16 97 DQ41 139 DQ48
14 DQ10 56 DQ17 98 DQ42 140 DQ49
15 DQ11 57 DQ18 99 DQ43 141 DQ50
16 DQ12 58 DQ19 100 DQ44 142 DQ51
17 DQ13 59 VCC 101 DQ45 143 VCC
18 VCC 60 DQ20 102 VCC 144 DQ52
19 DQ14 61 NC 103 DQ46 145 NC
20 DQ15 62 DU 104 DQ47 146 DU
21 NC (CB0) 63 CKE1 105 NC (CB4) 147 NC
22 NC (CB1) 64 VSS 106 NC (CB5) 148 VSS
23 VSS 65 DQ21 107 VSS 149 DQ53
24 NC 66 DQ22 108 NC 150 DQ54
25 NC 67 DQ23 109 NC 151 DQ55
26 VCC 68 VSS 110 VCC 152 VSS
27 WE 69 DQ24 111 CAS 153 DQ56
28 DQMB0 70 DQ25 112 DQMB4 154 DQ57
29 DQMB1 71 DQ26 113 DQMB5 155 DQ58
30 CS0 72 DQ27 114 CS1 156 DQ59
31 DU 73 VCC 115 RAS 157 VCC
32 VSS 74 DQ28 116 VSS 158 DQ60
33 A0 75 DQ29 117 A1 159 DQ61
34 A2 76 DQ30 118 A3 160 DQ62
35 A4 77 DQ31 119 A5 161 DQ63
36 A6 78 VSS 120 A7 162 VSS
37 A8 79 CLK2 121 A9 163 CLK3
38 A10 80 NC 122 BA 164 NC
39 NC 81 WP 123 NC 165 SA0
40 VCC 82 SDA 124 VCC 166 SA1
41 VCC 83 SCL 125 CLK1 167 SA2
42 CLK0 84 VCC 126 NC 168 VCC
Note : Pinnames in brackets are for the x72 ECC versions
Semiconductor Group 3
SDRAM-Modules
WE
CS0
DQMB0
DQ(7:0)
CS WE
DQM
DQ0-DQ7
D0
HYS64(72)V2200/4220GU-8/-10
DQMB4
DQ(39:32)
CS WE
DQM
DQ0-DQ7
D4
DQMB1
DQ(15:8)
CB(7:0)
CS2
DQMB2
DQ(23:16)
DQMB3
DQ(31:24)
A0-A10,BA
CS WE
DQM
DQ0-DQ7
CS WE
DQM
DQ0-DQ7
CS WE
DQM
DQ0-DQ7
CS WE
DQM
DQ0-DQ7
D0 - D7,(D8)
D1
D8
D2
D3
DQMB5
DQ(47:40)
DQMB6
DQ(55:48)
DQMB7
DQ(63:56)
E2PROM (256wordx8bit)
CS WE
DQM
DQ0-DQ7
D5
CS WE
DQM
DQ0-DQ7
D6
CS WE
DQM
DQ0-DQ7
D7
Note: D8 is only used in the x72 ECC version
Block Diagram for 2M x 64/72 SDRAM DIMM modules (HYS64/72V2200GU)
Semiconductor Group 4
VCC
VSS
RAS
CAS
CKE0
C0-C7,(C8)
D0 - D7,(D8)
D0 - D7,(D8)
D0 - D7,(D8)
D0 - D7,(D8)
D0 - D7,(D8)
SA0
SA1
SA2
SCL
CLK0 4 SDRAM+3.3pF 5 SDRAM
CLK1 Termination Termination
CLK2 4 SDRAM+3.3pF 4 SDRAM+3.3pF
CLK3 Termination Termination
SA0
SA1
SA2
SCL
Clock Wiring
2M x 64 2M x 72
SDA
WP
47k
SDRAM-Modules
CS1
CS0
DQMB0
DQM
CS
DQM
CS
HYS64(72)V2200/4220GU-8/-10
CS
DQM
DQMB4
DQM
CS
DQ(7:0)
DQMB1
DQ(15:8)
CB(7:0)
CS3
CS2
DQMB2
DQ(23:16)
DQMB3
DQ(31:24)
DQ0-DQ7
DQM
DQ0-DQ7
DQM
DQ0-DQ7
D16
CS
DQM
DQ0-DQ7
CS
DQM
DQ0-DQ7
D0
CS
D1
CS
D2
D3
DQ0-DQ7
DQM
DQ0-DQ7
DQM
DQ0-DQ7
D17
CS
DQM
DQ0-DQ7
D10
CS
DQM
DQ0-DQ7
D11
D8
CS
D9
CS
DQ(39:32)
DQMB5
DQ(47:40)
DQMB6
DQ(55:48)
DQMB7
DQ(63:56)
DQ0-DQ7
DQM
DQ0-DQ7
CS
DQM
DQ0-DQ7
CS
DQM
DQ0-DQ7
D4
CS
D5
D6
D7
DQ0-DQ7
D12
CS
DQM
DQ0-DQ7
D13
CS
DQM
DQ0-DQ7
D14
CS
DQM
DQ0-DQ7
D15
A0-A10,BA
VDD
VSS
, CAS, WE
RAS
CKE0
CKE1
Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ohms except otherwise noted.
C0-C31,(C32..C35)
VDD
10k
D0 - D15,(D16,D17)
D0 - D15,(D16,D17)
D0 - D7,(D8)
D0 - D15,(D16,D17)
D0 - D7,(D16)
D9 - D15,(D17)
CLK0 4 SDRAM+3.3pF 5 SDRAM
CLK1 4 SDRAM+3.3pF 5 SDRAM
CLK2 4 SDRAM+3.3pF 4 SDRAM+3.3pF
CLK3 4 SDRAM+3.3pF 4 SDRAM+3.3pF
2
E
PROM (256wordx8bit)
SA0
SA1
SA2
SCL
SA0
SA1
SA2
SCL
Clock Wiring
4M x 64 4M x 72
SDA
WP
Block Diagram for 4M x 64/72 SDRAM DIMM modules (HYS64/72V4220GU)
Semiconductor Group 5
47k
HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
DC Characteristics
T
= 0 to 70 °C; VSS = 0 V; V
A
DD,VDDQ
Parameter Symbol Limit Values Unit
= 3.3 V ± 0.3 V
min. max.
Input high voltage
Input low voltage
I
Output high voltage (
Output low voltage (
= – 2.0 mA) V
OUT
I
= 2.0 mA) V
OUT
Input leakage current, any input
V
(0 V <
< 3.6 V, all other inputs = 0 V)
IN
Output leakage current
V
(DQ is disabled, 0 V <
OUT
< VCC)
V
V
I
I
IH
IL
OH
OL
I(L)
O(L)
2.0 Vcc+0.3 V
– 0.5 0.8 V
2.4 – V
– 0.4 V
– 40 40 µA
– 40 40 µA
Capacitance
T
= 0 to 70 °C; V
A
= 3.3 V ± 0.3 V, f = 1 MHz
DD
Parameter Symbol Limit Values Unit
Input capacitance
(A0 to A10, BA, RAS, CAS, WE)
max.
2Mx64
C
I1
45 55 80 90 pF
max.
2Mx72
max.
4Mx64
max.
4Mx72
Input capacitance
Input capacitance (
Input capacitance
Input capacitance
Input / Output capacitance
(DQ0-DQ63,CB0-CB7)
Input Capacitance (SCL,SA0-2) C
Input/Output Capacitance C
(CS0 -CS3 ) C
CLK0 - CLK3) C
(CKE0, CKE1) C
(DQMB0 - DQMB7) C
I2
ICL
I3
I4
C
IO
sc
sd
Semiconductor Group 6
20 25 30 35 pF
22 38 22 38 pF
22 38 50 55 pF
13 13 20 20 pF
13 12 20 20 pF
8888pF
10 10 10 10 pF
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