Siemens HYS64V2100GCU-10, HYS64V2100GU-10, HYS72V2100GCU-10, HYS72V2100GU-10 Datasheet

3.3V 2M x 64-Bit SDRAM Module

3.3V 2M x 72-Bit SDRAM Module

HYS64V2100G(C)U-10
HYS72V2100G(C)U-10

168 pin unbuffered DIMM Modules

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

• 1 bank 2M x 64, 2M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• Fully PC66 layout compatible

• JEDEC standard Synchronous DRAMs (SDRAM)

• Performance:

-10

f

CK

t

AC

Max. Clock frequency 66 MHz @ CL=2

100 MHz @ CL=3

Max. access time from clock 9 ns @ CL=2

8 ns @ CL=3

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E

• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• Gold contact pad

• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU

• HYS64/72V2100GCU in chip-on-board technique

• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

•

2

PROM

Semiconductor Group 1

1 12.97

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory
Modules (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays
designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs
use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72
organisation. Decoupling capacitors are mounted on the PC board.

2

The DIMMs have a serial presence detect, implemented with a serial E
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are
available to the end user.

All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm
long footprint.

Ordering Information

Type Ordering Code Package Descriptions

HYS 64V2100GU-10 L-DIM-168-27 PC66 2M x 64 SDRAM module
HYS 72V2100GU-10 L-DIM-168-27 PC66 2M x 72 SDRAM module
HYS 64V2100GCU-10 L-DIM-168-C1 PC66 2M x 64 SDRAM COB module
HYS 72V2100GCU-10 L-DIM-168-C1 PC66 2M x 72 SDRAM COB module

PROM using the two pin I2C

Pin Names

A0-A10 Address Inputs( RA0 ~ RA10 / CA0 ~ CA8) CLK0, CLK1 Clock Input

A11 (BS) Bank Select DQMB0 -

DQMB7

DQ0 - DQ63 Data Input/Output CS0

CB0-CB7 Check Bits (x72 organisation only) Vcc Power (+3.3 Volt)

RAS
CAS

WE

CKE0

Row Address Strobe Vss Ground
Column Address Strobe SCL Clock for Presence Detect
Read / Write Input SDA Serial Data Out for Presence

Clock Enable N.C. No Connection

- CS3 Chip Select

Data Mask

Detect

Address Format:

Part Number Rows Columns Bank Select Refresh Period Interval
2M x 64 HYS64V2100G(C)U 11 9 1 4k 64 ms 15,6 µs
2M x 72 HYS72V2100G(C)U 11 9 1 4k 64 ms 15,6 µs

Semiconductor Group 2

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

Pin Configuration

PIN # Symbol PIN # Symbol PIN # Symbol PIN # Symbol

1 VSS 43 VSS 85 VSS 127 VSS
2 DQ0 44 DU 86 DQ32 128 CKE0
3 DQ1 45 CS2 87 DQ33 129 NC
4 DQ2 46 DQMB2 88 DQ34 130 DQMB6
5 DQ3 47 DQMB3 89 DQ35 131 DQMB7
6 VCC 48 DU 90 VCC 132 NC
7 DQ4 49 VCC 91 DQ36 133 VCC
8 DQ5 50 NC 92 DQ37 134 NC
9 DQ6 51 NC 93 DQ38 135 NC
10 DQ7 52 NC (CB2) 94 DQ39 136 CB6
11 DQ8 53 NC (CB3) 95 DQ40 137 CB7
12 VSS 54 VSS 96 VSS 138 VSS
13 DQ9 55 DQ16 97 DQ41 139 DQ48
14 DQ10 56 DQ17 98 DQ42 140 DQ49
15 DQ11 57 DQ18 99 DQ43 141 DQ50
16 DQ12 58 DQ19 100 DQ44 142 DQ51
17 DQ13 59 VCC 101 DQ45 143 VCC
18 VCC 60 DQ20 102 VCC 144 DQ52
19 DQ14 61 NC 103 DQ46 145 NC
20 DQ15 62 DU 104 DQ47 146 DU
21 NC (CB0) 63 NC 105 NC (CB4) 1 47 NC
22 NC (CB1) 64 VSS 106 NC (CB5) 148 VSS
23 VSS 65 DQ21 107 VSS 149 DQ53
24 NC 66 DQ22 108 NC 15 0 DQ54
25 NC 67 DQ23 109 NC 15 1 DQ55
26 VCC 68 VSS 110 VCC 152 VSS
27 WE 69 DQ24 111 CAS 153 DQ56
28 DQMB0 70 DQ25 112 DQMB4 154 DQ57
29 DQMB1 71 DQ26 113 DQMB5 155 DQ58
30 CS0 72 DQ27 114 NC 156 DQ59
31 DU 73 VCC 115 RAS 157 VCC
32 VSS 74 DQ28 116 VSS 158 DQ60
33 A0 75 DQ29 117 A1 159 DQ61
34 A2 76 DQ30 118 A3 160 DQ62
35 A4 77 DQ31 119 A5 161 DQ63
36 A6 78 VSS 120 A7 162 VSS
37 A8 79 CLK2 121 A9 163 CLK3
38 A10 80 NC 122 A11=BS 164 NC
39 NC 81 NC 123 NC 165 SA0
40 VCC 82 SDA 124 VCC 166 SA1
41 VCC 83 SCL 125 CLK1 167 SA2
42 CLK0 84 VCC 126 NC 168 VCC

Note : Pinnames in brackets are for the x72 ECC versions

Semiconductor Group 3

WE
CS0
DQMB0
DQ0-DQ7

CS WE

DQM
DQ0-DQ7

D0

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

DQMB4
DQ32-DQ39

CS WE

DQM
DQ0-DQ7

D4

DQMB1
DQ8-DQ15

CB0-CB7

CS2

DQMB2

DQ16-DQ23

DQMB3
DQ24-DQ31

A0-A10,BS

CS WE

DQM
DQ0-DQ7

CS WE

DQM
DQ0-DQ7

CS WE

DQM
DQ0-DQ7

CS WE

DQM
DQ0-DQ7

D0 - D7,(D8)

D1

D8

D2

D3

DQMB5
DQ40-DQ47

DQMB6
DQ48-DQ55

DQMB7
DQ56-DQ63

E2PROM (256wordx8bit)

CS WE

DQM
DQ0-DQ7

D5

CS WE

DQM
DQ0-DQ7

D6

CS WE

DQM
DQ0-DQ7

D7

VCC

VSS
RAS
CAS
CKE0

Note: D8 is only used in the x72 ECC version

C1-C8,(C9)

D0 - D7,(D8)
D0 - D7,(D8)

D0 - D7,(D8)

D0 - D7,(D8)
D0 - D7,(D8)

Block Diagram for 2M x 64/72 SDRAM DIMM modules

Semiconductor Group 4

SA0
SA1
SA2

CLK0

CLK1

CLK2,CLK3

SA0
SA1
SA2

SCL
SDA

2 SDRAMs
2 (3) SDRAMs

2 SDRAMs
2 SDRAMs

10 pF