Siemens HYS64V2100GCU-10, HYS64V2100GU-10, HYS72V2100GCU-10, HYS72V2100GU-10 Datasheet

3.3V 2M x 64-Bit SDRAM Module

3.3V 2M x 72-Bit SDRAM Module

HYS64V2100G(C)U-10 HYS72V2100G(C)U-10

168 pin unbuffered DIMM Modules

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

• 1 bank 2M x 64, 2M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• Fully PC66 layout compatible

• JEDEC standard Synchronous DRAMs (SDRAM)

• Performance:

-10

Max. Clock frequency 66 MHz @ CL=2

100 MHz @ CL=3

Max. access time from clock 9 ns @ CL=2

8 ns @ CL=3

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E

• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• Gold contact pad

• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU

• HYS64/72V2100GCU in chip-on-board technique

• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

•

PROM

Semiconductor Group 1

1 12.97

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation and an additional SDRAM for the 2M x 72 organisation. Decoupling capacitors are mounted on the PC board.

The DIMMs have a serial presence detect, implemented with a serial E protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.

All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint.

Ordering Information

Type Ordering Code Package Descriptions

HYS 64V2100GU-10 L-DIM-168-27 PC66 2M x 64 SDRAM module HYS 72V2100GU-10 L-DIM-168-27 PC66 2M x 72 SDRAM module HYS 64V2100GCU-10 L-DIM-168-C1 PC66 2M x 64 SDRAM COB module HYS 72V2100GCU-10 L-DIM-168-C1 PC66 2M x 72 SDRAM COB module

PROM using the two pin I2C

Pin Names

A0-A10 Address Inputs( RA0 ~ RA10 / CA0 ~ CA8) CLK0, CLK1 Clock Input

A11 (BS) Bank Select DQMB0 -

DQMB7

DQ0 - DQ63 Data Input/Output CS0

CB0-CB7 Check Bits (x72 organisation only) Vcc Power (+3.3 Volt)

RAS CAS

CKE0

Row Address Strobe Vss Ground Column Address Strobe SCL Clock for Presence Detect Read / Write Input SDA Serial Data Out for Presence

Clock Enable N.C. No Connection

- CS3 Chip Select

Data Mask

Detect

Address Format:

Part Number Rows Columns Bank Select Refresh Period Interval 2M x 64 HYS64V2100G(C)U 11 9 1 4k 64 ms 15,6 µs 2M x 72 HYS72V2100G(C)U 11 9 1 4k 64 ms 15,6 µs

Semiconductor Group 2

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

Pin Configuration

PIN # Symbol PIN # Symbol PIN # Symbol PIN # Symbol

1 VSS 43 VSS 85 VSS 127 VSS 2 DQ0 44 DU 86 DQ32 128 CKE0 3 DQ1 45 CS2 87 DQ33 129 NC 4 DQ2 46 DQMB2 88 DQ34 130 DQMB6 5 DQ3 47 DQMB3 89 DQ35 131 DQMB7 6 VCC 48 DU 90 VCC 132 NC 7 DQ4 49 VCC 91 DQ36 133 VCC 8 DQ5 50 NC 92 DQ37 134 NC 9 DQ6 51 NC 93 DQ38 135 NC 10 DQ7 52 NC (CB2) 94 DQ39 136 CB6 11 DQ8 53 NC (CB3) 95 DQ40 137 CB7 12 VSS 54 VSS 96 VSS 138 VSS 13 DQ9 55 DQ16 97 DQ41 139 DQ48 14 DQ10 56 DQ17 98 DQ42 140 DQ49 15 DQ11 57 DQ18 99 DQ43 141 DQ50 16 DQ12 58 DQ19 100 DQ44 142 DQ51 17 DQ13 59 VCC 101 DQ45 143 VCC 18 VCC 60 DQ20 102 VCC 144 DQ52 19 DQ14 61 NC 103 DQ46 145 NC 20 DQ15 62 DU 104 DQ47 146 DU 21 NC (CB0) 63 NC 105 NC (CB4) 1 47 NC 22 NC (CB1) 64 VSS 106 NC (CB5) 148 VSS 23 VSS 65 DQ21 107 VSS 149 DQ53 24 NC 66 DQ22 108 NC 15 0 DQ54 25 NC 67 DQ23 109 NC 15 1 DQ55 26 VCC 68 VSS 110 VCC 152 VSS 27 WE 69 DQ24 111 CAS 153 DQ56 28 DQMB0 70 DQ25 112 DQMB4 154 DQ57 29 DQMB1 71 DQ26 113 DQMB5 155 DQ58 30 CS0 72 DQ27 114 NC 156 DQ59 31 DU 73 VCC 115 RAS 157 VCC 32 VSS 74 DQ28 116 VSS 158 DQ60 33 A0 75 DQ29 117 A1 159 DQ61 34 A2 76 DQ30 118 A3 160 DQ62 35 A4 77 DQ31 119 A5 161 DQ63 36 A6 78 VSS 120 A7 162 VSS 37 A8 79 CLK2 121 A9 163 CLK3 38 A10 80 NC 122 A11=BS 164 NC 39 NC 81 NC 123 NC 165 SA0 40 VCC 82 SDA 124 VCC 166 SA1 41 VCC 83 SCL 125 CLK1 167 SA2 42 CLK0 84 VCC 126 NC 168 VCC

Note : Pinnames in brackets are for the x72 ECC versions

Semiconductor Group 3

WE CS0 DQMB0 DQ0-DQ7

CS WE

DQM DQ0-DQ7

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

DQMB4 DQ32-DQ39

CS WE

DQM DQ0-DQ7

DQMB1 DQ8-DQ15

CB0-CB7

CS2

DQMB2

DQ16-DQ23

DQMB3 DQ24-DQ31

A0-A10,BS

CS WE

DQM DQ0-DQ7

CS WE

DQM DQ0-DQ7

CS WE

DQM DQ0-DQ7

CS WE

DQM DQ0-DQ7

D0 - D7,(D8)

DQMB5 DQ40-DQ47

DQMB6 DQ48-DQ55

DQMB7 DQ56-DQ63

E2PROM (256wordx8bit)

CS WE

DQM DQ0-DQ7

CS WE

DQM DQ0-DQ7

CS WE

DQM DQ0-DQ7

VCC

VSS RAS CAS CKE0

Note: D8 is only used in the x72 ECC version

C1-C8,(C9)

D0 - D7,(D8) D0 - D7,(D8)

D0 - D7,(D8)

D0 - D7,(D8) D0 - D7,(D8)

Block Diagram for 2M x 64/72 SDRAM DIMM modules

Semiconductor Group 4

SA0 SA1 SA2

CLK0

CLK1

CLK2,CLK3

SA0 SA1 SA2

SCL SDA

2 SDRAMs 2 (3) SDRAMs

2 SDRAMs 2 SDRAMs

10 pF

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