Siemens HYM72V4005GS-50, HYM72V4005GS-60, HYM72V4015GS-50, HYM72V4015GS-60 Datasheet

4M × 72-Bit EDO-DRAM Module (ECC - Module)
HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60
168 pin buffered DIMM Module
for PC main memory applications
1 bank 4M x 72 organisation
Optimized for ECC applications
Extended Data Out (EDO)
Performance:
-50 -60 tRAC RAS Access Time 50 ns 60 ns tCAC CAS Access Time 18 ns 20 ns tAA Access Time from Address 30 ns 35 ns tRC Cycle Time 84 ns 104 ns tHPC EDO Mode Cycle Time 20 ns 2 5 ns
Single + 3.3V (± 0.3V) supply
CAS-before-RAS refresh, RAS-only-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clock fully LVTTL & LVCMOS compatible
4 Byte interleave enabled, Dual Address inputs (A0/B0)
Buffered inputs excepts RAS and DQ
Parallel Presence detects
Utilizes eighteen 4M × 4 -DRAMs and four BiCMOS buffers/line drivers
Two versions : HYM 72V4005GS with TSOPII-components (4 mm thickness)
HYM 72V4015GS with SOJ-components (9 mm thickness)
4096 refresh cycles / 64 ms with 12 / 10 addressing
Gold contact pad
Double sided module with 25.35 mm (1000 mil) height
Semiconductor Group 1
1 5.96
HYM72V4005/15GS-50/-60
4M x 72-ECC EDO-Module
The HYM 72V4005/15GS-50/-60 is a 32 MByte DRAM module organized as 4 194 430 words by 72­bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3116405BT/BJ 4M × 4 DRAMs in 300 mil wide TSOPII or SOJ- packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS BiCMOS buffers/line drivers.
Each HYB 3116405BT/BJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information Type Ordering Code Package Descriptions
HYM 72V4005GS-50 L-DIM-168-5 3.3V 50ns EDO-DRAM module HYM 72V4005GS-60 L-DIM-168-5 3.3V 60ns EDO-DRAM module
and DQ are buffered by using four
HYM 72V4015GS-50 L-DIM-168-5 3.3V 50ns EDO-DRAM module HYM 72V4015GS-60 L-DIM-168-5 3.3V 60ns EDO-DRAM module
Pin Names
A0-A11,B0 Address Input DQ0 - DQ71 Data Input/Output
, RAS2 Row Address Strobe
RAS0
, CAS4 Column Address Strobe
CAS0
, WE2 Read / Write Input
WE0
, OE2 Output Enable
OE0 Vcc Power (+3.3 Volt) Vss Ground PD1 - PD8 Presence Detect Pins PDE ID0 , ID1 ID indentification bit N.C. No Connection
Presence-Detect and ID-pin Truth Table:
Module ID0 ID1 PD1 PD2 PD3 PD4 PD5 PD6 PD7 PD8 HYM 72V4005/15GS-50 Vss Vss 1 1 0 1 1 0 0 0
Presence Detect Enable
HYM 72V4005/15GS-60 Vss Vss 1 1 0 1 1 1 1 0
Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high
level all PD terminal are in tri-state.
Semiconductor Group 2
Pin Configuration
PIN # Symbol PIN # Symbol PIN # Symbol PIN # Symbol
1 VSS 43 VSS 85 VSS 127 VSS 2 DQ0 44 OE2 86 DQ36 128 NC 3 DQ1 45 RAS2 87 DQ37 129 NC 4 DQ2 46 CAS4 88 DQ38 130 NC 5 DQ3 47 NC 89 DQ39 131 NC 6 VCC 48 WE2 90 VCC 132 PDE 7 DQ4 49 VCC 91 DQ40 133 VCC 8 DQ5 50 NC 92 DQ41 134 NC 9 DQ6 51 NC 93 DQ42 135 NC 10 DQ7 52 DQ18 94 DQ43 136 DQ54 11 DQ8 53 DQ19 95 DQ44 137 DQ55 12 VSS 54 VSS 96 VSS 138 VSS 13 DQ9 55 DQ20 97 DQ45 139 DQ56 14 DQ10 56 DQ21 98 DQ46 140 DQ57 15 DQ11 57 DQ22 99 DQ47 141 DQ58 16 DQ12 58 DQ23 100 DQ48 142 DQ59 17 DQ13 59 VCC 101 DQ49 143 VCC 18 VCC 60 DQ24 102 VCC 144 DQ60 19 DQ14 61 NC 103 DQ50 145 NC 20 DQ15 62 NC 104 DQ51 146 NC 21 DQ16 63 NC 105 DQ52 147 NC 22 DQ17 64 NC 106 DQ53 148 NC 23 VSS 65 DQ25 107 VSS 149 DQ61 24 NC 66 DQ26 108 NC 150 DQ62 25 NC 67 DQ27 109 NC 151 DQ63 26 VCC 68 VSS 110 VCC 152 VSS 27 WE0 69 DQ28 111 NC 153 DQ64 28 CAS0 70 DQ29 112 NC 154 DQ65 29 NC 71 DQ30 113 NC 155 DQ66 30 RAS0 72 DQ31 114 NC 156 DQ67 31 OE0 73 VCC 115 NC 157 VCC 32 VSS 74 DQ32 116 VSS 158 DQ68 33 A0 75 DQ33 117 A1 159 DQ69 34 A2 76 DQ34 118 A3 160 DQ70 35 A4 77 DQ35 119 A5 161 DQ71 36 A6 78 VSS 120 A7 162 VSS 37 A8 79 PD1 121 A9 163 PD2 38 A10 80 PD3 122 A11 164 PD4 39 NC 81 PD5 123 NC 165 PD6 40 VCC 82 PD7 124 VCC 166 PD8 41 NC 83 ID0 (VSS) 125 NC 167 ID1 (VSS) 42 NC 84 VCC 126 B0 168 VCC
HYM72V4005/15GS-50/-60
4M x 72-ECC EDO-Module
Semiconductor Group 3
HYM72V4005/15GS-50/-60
4M x 72-ECC EDO-Module
RAS0 CAS0
WE0 OE0
DQ0-DQ3
DQ4-DQ7
DQ8-DQ11
DQ12-DQ15
DQ16-DQ19
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
D0
D1
D2
D3
D4
RAS2 CAS4
WE2 OE2
DQ36-DQ39
DQ40-DQ43
DQ44-DQ47
DQ48-DQ51
DQ52-DQ55
I/O1-I/O4
D9
I/O1-I/O4
D10
I/O1-I/O4
D11
I/O1-I/O4
D12
I/O1-I/O4
D13
DQ20-DQ23
DQ24-DQ27
DQ28-DQ31
DQ32-DQ35
A0 B0 A1-A11
Block Diagram
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
D5
D6
D7
D8
D0 - D8 D9 - D17 D0 - D17
DQ56-DQ59
DQ60-DQ63
DQ64-DQ67
DQ68-DQ71
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
I/O1-I/O4
Vcc
Vss
PDE
Vcc or Vss
D14
D15
D16
D17
D0-D17, buffers
PD1-PD8
Semiconductor Group 4
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