Siemens HYM321160GS-60, HYM321160GS-70, HYM321160S-60, HYM321160S-70 Datasheet
Semiconductor Group 541 09.94
1M x 32-Bit Dynamic RAM Module
(2M x 16-Bit Dynamic RAM Module)
Advanced Information
HYM 321160S/GS-60/-70
• 1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 44 mW standby
TTL – 88 mW standby
Ordering Information
Type Ordering Code Package Descriptions
HYM 321160S-60 Q67100-Q2010 L-SIM-72-11 DRAM module
(access time 60 ns)
HYM 321160S-70 on request L-SIM-72-11 DRAM module
(access time 70 ns)
HYM 321160GS-60 Q67100-Q2009 L-SIM-72-11 DRAM module
(access time 60 ns)
HYM 321160GS-70 on request L-SIM-72-11 DRAM module
(access time 70 ns)
• CAS-before-RAS refresh, RAS-only-refresh,
Hidden refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clock fully TTL
compatible
• 72 pin Single in-Line Memory Module
• Utilizes eight 1M × 4-DRAMs in 300 mil SOJ
packages
• 1024 refresh cycles /16 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
• single sided module with 25.4 mm (1000 mil)
height
Semiconductor Group 542
The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by
32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M × 4 DRAMs in 300 mil
wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC
board.
The HYM 321160S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB 514400BJ is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 321160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Presence Detect Pins
Pin No. Function
A0-A9 Address Inputs
DQ0-DQ31 Data Input/Output
CAS0 - CAS3 Column Address Strobe
RAS0, RAS2 Row Address Strobe
WE Read/Write Input
V
CC
Power (+ 5 V)
V
SS
Ground
PD Presence Detect Pin
N.C. No Connection
-60 -70
PD0
V
SS
V
SS
PD1 V
SS
V
SS
PD2 N.C. V
SS
PD3 N.C. N.C.
HYM 321160S/GS-60/-70
1M x 32-Bit
Semiconductor Group 543
HYM 321160S/GS-60/-70
1M x 32-Bit
Pin Configuration
(top view)
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