Siemens HYM321160GS-60, HYM321160GS-70, HYM321160S-60, HYM321160S-70 Datasheet

Semiconductor Group 541 09.94

1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module)

Advanced Information

HYM 321160S/GS-60/-70

• 1 048 576 words by 32-bit organization

(alternative 2 097 152 words by 16-bit)

• Fast access and cycle time

60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version)

• Fast page mode capability with

40 ns cycle time (-60 version) 45 ns cycle time (-70 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS – 44 mW standby TTL – 88 mW standby

Ordering Information Type Ordering Code Package Descriptions

HYM 321160S-60 Q67100-Q2010 L-SIM-72-11 DRAM module

(access time 60 ns)

HYM 321160S-70 on request L-SIM-72-11 DRAM module

(access time 70 ns)

HYM 321160GS-60 Q67100-Q2009 L-SIM-72-11 DRAM module

(access time 60 ns)

HYM 321160GS-70 on request L-SIM-72-11 DRAM module

(access time 70 ns)

• CAS-before-RAS refresh, RAS-only-refresh,

Hidden refresh

• 8 decoupling capacitors mounted on

substrate

• All inputs, outputs and clock fully TTL

compatible

• 72 pin Single in-Line Memory Module

• Utilizes eight 1M × 4-DRAMs in 300 mil SOJ

packages

• 1024 refresh cycles /16 ms

• Tin-Lead contact pads (S - version)

• Gold contact pads (GS - version)

• single sided module with 25.4 mm (1000 mil)

height

Semiconductor Group 542

The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board.

The HYM 321160S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and DQ31, respectively.

Each HYB 514400BJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 321160S/GS-60/-70 dictates the use of early write cycles.

Pin Definitions and Functions

Presence Detect Pins

Pin No. Function

A0-A9 Address Inputs DQ0-DQ31 Data Input/Output CAS0 - CAS3 Column Address Strobe RAS0, RAS2 Row Address Strobe WE Read/Write Input

Power (+ 5 V)

Ground PD Presence Detect Pin N.C. No Connection

-60 -70

PD0

PD1 V

PD2 N.C. V

PD3 N.C. N.C.

HYM 321160S/GS-60/-70

1M x 32-Bit

Semiconductor Group 543

HYM 321160S/GS-60/-70

1M x 32-Bit

Pin Configuration

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