Siemens FP210L100-22 Datasheet
Differential Magnetoresistive Sensor FP 210 L 100-22
Features
• High operating
temperature
• High output voltage
• Robust cylindrical
housing
• Biasing magnet build in
• Signal amplitude
independent of speed
• Easily connectable
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of
rotation
• Angle encoder
• Linear position sensing
Dimensions in mm
Type Ordering Code
FP 210 L 100-22 Q65210-L100-W4
The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled
L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are
mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor
is encapsulated in a plastic package with three in-line contacts extending from the base.
The basic resistance of the total system in the unbiased state is 2×100 Ω. A permanent
magnet which supplies a biasing magnetic field is built into the housing.
Semiconductor Group 1 07.96
FP 210 L 100-22
Maximum ratings
Parameter Symbol Value Unit
Operating temperature
Storage temperature
Power dissipation
Supply voltage
1)
2)
Insulation voltage between
terminals and casing
Thermal conductivity
Characteristics (
T
= 25 °C)
A
Nominal supply voltage
Total resistance, (δ = ∞,
4)
3)
(δ = ∞)
Center symmetry
Offset voltage
(at V
and δ = ∞)
IN N
I ≤ 1 mA) R
Open circuit output voltage
(V
and δ = 0.2 mm)
IN N
5)
T
T
P
V
V
G
V
M
V
V
A
stg
tot
IN
I
thA
IN N
1-3
0
out pp
– 40/ +140 °C
– 40/ +150 °C
400 mW
7.5 V
> 100 V
≥ 5 mW/K
5V
220…400 Ω
≤ 10 %
≤ 130 mV
> 1000 mV
Cut-off frequency
f
c
> 20 kHz
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
1) Corresponding to diagram P
2) Corresponding to diagram
3)
M
4) Corresponding to measuring circuit in Fig. 2
5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1
R
----------------------------=
–
12–R23–
R
12–
= f(TA)
tot
V
= f(T
IN
A
× 100% for R
)
> R
1-2
2-3
V
OUT
.
Semiconductor Group 2
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