Siemens CMY91 Datasheet

GaAs MMIC CMY 91
g
________________________________________________________________________________________________________
D a t a s h e e t
* GaAs mixer with integrated IF-amplifier for mobile
communication
* Frequency range 0.8 GHz to 2.5 GHz
RF
GND
5
6
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code (taped) Package 1)
CMY 91 M2 Q62702-M9 MW-6
RF(in)[6] CAP(1)[1]
LO
4
3
2
IF
CAP
1
GND
IF(out)[3]
LO(in)[4] GND[2;5]
Maximum ratings Symbol Unit
Drain-source voltage V Gate-source voltage range V
IF-GND
LO-GND
Drain current I RF- / LO-peak current +I
RF, +ILO
Channel temperature T Storage temperature range T Total power dissipation (T
= tbd °C)
S
2)
P
IF
Ch st
tot
8V
-5 ... 0 V 20 mA
2mA
150 °C
-55...+150 °C 160 mW
Thermal resistance
Channel-soldering point GND R
thChS
350 K/W
1) Dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point GND
Siemens Aktiengesellschaft pg. 1/9 16.12.96
HL EH PD21
GaAs MMIC CMY 91
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C / VD = 3 V unless otherwise specified
Characteristics of 900MHz test and application circuit (see page app. circuit)
Parameters Symbol min typ max Unit
Drain-source breakdown voltage
IIF = 500 µA V V
RF-GND
= 4 V CAP-pin not connected
LO-GND
= 0 V
Drain current
V
RF-GND
V
IF-GND
= 0 V V
= 3 V CAP-pin not connected
LO-GND
= 0 V
Conversion gain
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
Single sideband noise figure
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
3rd order intermodulation
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
LO/RF isolation
f = 965 MHz
T
= 25°C /
A
V
= 3 V; CAP-pin connected to ground by 680 resistor
D
V
IF-GND
I
D
G
C
F
SSB
IP3
Iso
LO/RF
8--V
0.8 1 1.4 mA
- 5.5 - dB
-9-dB
- -2 - dBm
-11-dB
Parameters Symbol min typ max Unit
Drain current
V
RF-GND
V
IF-GND
= 0 V V
= 3 V
LO-GND
= 0 V
I
D
- 2.5 - mA
Conversion gain
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
G
C
- 9.5 - dB
Single sideband noise figure
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
F
SSB
- 8.0 dB
3rd order intermodulation
fRF = 920 MHz fLO = 965 MHz fIF = 45 MHz PLO = -3 dBm
LO/RF isolation
f = 965 MHz
Not used ports were terminated by 50 . Please make sure that LO-signal is clean of noise and spurious at f = f
IP3
Iso
LO/RF
- 0 - dBm
-11-dB
+/- f
LO
IF
Siemens Aktiengesellschaft pg. 2/9 16.12.96
HL EH PD21
GaAs MMIC CMY 91
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C / VD = 3 V unless otherwise specified
Characteristics of 1450MHz application circuit (see page app. circuit)
Parameters Symbol min typ max Unit
Drain-source breakdown voltage
IIF = 500 µA V V
RF-GND
= 4 V CAP-pin not connected
LO-GND
= 0 V
Drain current
V
RF-GND
V
IF-GND
= 0 V V
= 3 V CAP-pin not connected
LO-GND
= 0 V
Conversion gain
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
Single sideband noise figure
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
3rd order intermodulation
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
LO/RF isolation
f = 1350 MHz
T
= 25°C /
A
V
= 3 V; CAP-pin connected to ground by 680 resistor
D
V
IF-GND
I
D
G
C
F
SSB
IP3
Iso
LO/RF
8--V
0.8 1 1.4 mA
- 5.5 - dB
-10-dB
- -2 - dBm
-8-dB
Parameters Symbol min typ max Unit
Drain current
V
RF-GND
V
IF-GND
= 0 V V
= 3 V
LO-GND
= 0 V
I
D
- 2.5 - mA
Conversion gain
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
G
C
- 7.5 - dB
Single sideband noise figure
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
F
SSB
- 9.5 - dB
3rd order intermodulation
fRF = 1450 MHz fLO = 1350 MHz fIF = 100 MHz PLO = -3 dBm
LO/RF isolation
f = 1350 MHz
Not used ports were terminated by 50 .
IP3
Iso
LO/RF
- 0 - dBm
-8-dB
Siemens Aktiengesellschaft pg. 3/9 16.12.96
HL EH PD21
Loading...
+ 6 hidden pages