GaAs MMIC CGY 62
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D a t a s h e e t
* Two-stage microwave broadband amplifier IC
*50 Ω input / output
*Operating voltage range: 2.7 to 5 V
GND
GND
6
IN
5
* High gain and output power
(typ.: G=20 dB, P-=17,5 dBm @ 4.5V, 1GHz )
*Frequency range 200 MHz ... 2.5 GHz
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
CGY 62 Y6s Q68000-A8787 MW-6
4
1
OUT
Package 1)
2
GND
3
Interstage
Maximum ratings Symbol Unit
Drain voltage
Channel temperature
Storage temperature range
Total power dissipation (TS < 70°C)
2)
T
T
P
V
D
Ch
stg
tot
6V
150 °C
-55...+150 °C
800 mW
Thermal resistance
Channel-soldering point (GND)
Junction-ambient
1) Dimensions see chapter Package Outlines
2) Please care for sufficient heat dissipation on the pcb!
3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm
3)
R
thChS
R
thJA
< 100 K/W
< 180 K/W
Siemens Aktiengesellschaft pg. 1/5 15.01.96
HL EH PD 21
GaAs MMIC CGY 62
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Electrical characteristics
T
= 25°C
A
unless otherwise specified
Characteristics Symbol min typ max Unit
V
= 4,5 V RS = RL = 50 Ω
D
Drain current
Power Gain
f = 200 MHz to 1800 MHz
f = 2500 MHz
Gain flatness
f = 200 MHz to 1800 MHz
Noise figure
f = 200 MHz to 1800 MHz
Input return loss
f = 200 MHz to 500 MHz
f = 500 MHz to 2500 MHz
Output return loss
f = 200 MHz to 2500 MHz
Third order intercept point
two-tone intermodulation test
f 1= 806 MHz f2 = 810 MHz
Po = -10 dBm (both carriers)
∆
RL
RL
IP
I
D
G
F
G
in
out
3
- 130 175 mA
18
-
19
15
-
-
- 2 3.5 dB
- 3.5 4.0
-
10
8
15
-
-
10 13 -
dBm
-30-
dB
dB
dB
dB
Output power at 1dB gain
compression
f = 200 MHz to 1800 MHz
Siemens Aktiengesellschaft pg. 2/5 15.01.96
P
-1
dB
dBm
- 17.5 -
HL EH PD 21