Siemens CGY52 Datasheet

GaAs MMIC CGY 52

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D a t a s h e e t

* Two stages monolithic microwave IC (MMIC­ Amplifier)

*All gold metallisation
*Chip fully passivated
*Operating voltage range: 2.7 to 5 V
*50 Ω input / output

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type Marking Ordering code

(taped)

Package 1)

CGY 52 CGY52 Q68000-A8615 MW-7

Maximum ratings Symbol Unit

Drain voltage
Channel temperature
Storage temperature range
Total power dissipation

(TS < 55°C)

2) 3)

Thermal resistance

Channel-soldering point (GND)
Junction-ambient

4)

2)

V
T
T

P

R

thChS

R

thJA

D
Ch
stg

tot

6V

150 °C

-55...+150 °C
1000 mW

< 95 K/W

< 175 K/W

1) Dimensions see chapter Package Outlines

2) TS is measured on the source 2 lead at the soldering point of the pcb.

3) Please care for sufficient heat dissipation on the pcb!

4) Package mounted on alumina 15mm x16.7 mm x0.7 mm

Siemens Aktiengesellschaft pg. 1/4 12.02.96

HL EH PD 21

GaAs MMIC CGY 52

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Electrical characteristics

T

= 25°C VD = 4.5 V RS = RL = 50Ω

A

unless otherwise specified

Characteristics Symbol min typ max Unit

Drain current
Power Gain

f = 200 MHz
f = 900 MHz
f = 1800 MHz

Gain flatness

f = 200 MHz to 1800 MHz

Noise figure

f = 900 MHz to 1800 MHz

Input return loss

f = 200 MHz to 300 MHz
f = 300 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz

Output return loss

f = 200 MHz to 1800 MHz
f = 200 MHz
f = 900 MHz
f = 1800 MHz

∆

RL

RL

I

D

G

F

G

in

out

- 160 220 mA

13

14.5

12.5

14

15.5

13.5

-

dB

-

-

-34dB

- 4.8 - dB

6.5

7.5

-

-

-

9.5

-

-

-

7.5

8.5

7.5

12.5
9

10.5

10.5

12.5

11.5

-

dB

-

-

-

-

-

dB

-

-

-

Third order input intercept point

two-tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz

= 10 dBm (both carriers)

P

=

1dB gain compression

f = 200 MHz to 1800 MHz

Siemens Aktiengesellschaft pg. 2/4 12.02.96

P

IP

-1

3

dB

- 32 - dBm

-19-

dBm

HL EH PD 21