Siemens CGY40 Datasheet

GaAs MMIC CGY 40

________________________________________________________________________________________________________

D a t a s h e e t

* Single-stage monolithic microwave IC ( MMIC­ amplifier )
* Application range: 100 MHz to 3 GHz

* Gain: 9 dB typ. @ 1.6 GHz
* Low noise figure: 2.7 dB typ. @ 1.6 GHz
* Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1
* Operating voltage range: 3 to 5.5 V

* Individual current control with neg. gate bias
* Hermetically sealed ceramic stripline package

Cerec-X

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type Marking Ordering code

(tape and reel)

Circuit Diagram

(Pin Configuration)

Package 1)

CGY 40 40 Q68000-A4444 Cerec-X

Maximum ratings Symbol Value Unit

Drain-voltage
Current control gate voltage

Drain-gate voltage
Input power
Channel temperature
Storage temperature range

Total power dissipation (TS < 82°C)

2)

V

T
T

V
V

P

P

D
G

DG

IN
Ch
stg

tot

5.5 V

-3 ... 0 V

8.5 V
16 dBm

150 °C

-55...+150 °C
440 mW

Thermal resistance

Channel-soldering point

Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is
required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes.
Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF
performance, stable operating conditions and adequate cooling.

1) Dimensions see chapter Package Outlines

2) Ts is measured on the source lead at the soldering point to the PCB.

Siemens Aktiengesellschaft pg. 1/5 11.01.1996

2)

R

thChS

155 K/W

HL EH PD 21

GaAs MMIC CGY 40

________________________________________________________________________________________________________

Electrical Characteristics

TA = 25 °C, VG = 0 V, VD = 4.5 V, RS = RL = 50 Ω, unless otherwise specified
( for application circuit see next page )

Characteristics Symbol min typ max Unit

Drain current

Power gain

f = 200 MHz
f = 1800 MHz

Gain flatness

f = 200 to 1000 MHz
f = 800 to 1800 MHz

Noise figure

f = 200 to 1000 MHz
f = 800 to 1800 MHz

Input return loss

f = 200 to 1000 MHz
f = 800 to 1800 MHz

Output return loss

f = 200 to 1000 MHz
f = 800 to 1800 MHz

∆

RL

RL

I

G

F

G

-6080

9.5
8

-

-

-

-

-

-

-

-

10.5
9

0.4

1.1

2.5

2.8

13
12

12
12

12

10.5

-

2

-

4.0

-

9.5

-

9.5

mA

dB

dB

dB

dB

dB

Third order intercept point

Two tone intermodulation test

= 806 MHz, f

f
P

= 10 dBm ( both carriers )

0

= 810 MHz

1dB gain compression

f = 200 to 1800 MHz

Gain control dynamic range

f = 200 to 1000 MHz
f = 800 to 1800 MHz

Siemens Aktiengesellschaft pg. 2/5 11.01.1996

IP3

P

∆

G

31 32 -

-18-

-

-

30
20

-

-

HL EH PD 21

dBm

dBm

dB