Siemens CGY31 Datasheet

GaAs MMIC CGY 31

● Two-stage monolithic microwave IC (MMIC amplifier)

● All-gold metallization

● Chip fully passivated

● Operating voltage range: 3 to 6 V

● 50 Ω input/output; RLIN RLOUT > 10 dB

● Gain: 18 dB at 1.6 GHz

● Low noise figure: 4 dB at 1.6 GHz

● 3 dB bandwidth: 2 GHz

● Hermetically sealed package

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Circuit Diagram (Pin Configuration)

Package

CGY 31 Q68000-A6887 TO-12

1 RF output,
2 Interstage,
3 RF input

4 RF and DC

ground, case

V

S

V

S

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

CGY 31

Maximum Ratings
Parameter Symbol Values Unit

Supply voltage, T
Total power dissipation, T

C ≤ 80 ˚C VS 6V

C ≤ 50 ˚C Ptot 2W

Channel temperature Tch 150 ˚C
Storage temperature range T

stg – 55 … + 150

Thermal Resistance

Channel - case RthchC 50 K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.

Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.

Semiconductor Group 2

Electrical Characteristics

Ω

at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 , unless otherwise specified,
(for application circuit see next page).

min. typ. max.

CGY 31

UnitValuesParameter Symbol

mAOperating current Iop – 160 200

f= 800 MHz to 1800 MHz

Gain flatness

f= 800 MHz to 1800 MHz

Noise figure

f= 800 MHz to 1800 MHz

Input return loss

f= 800 MHz to 1800 MHz

Output return loss

f= 800 MHz to 1800 MHz

two-tone intermodulation test

1= 806 MHz, f2= 810 MHz,

f

o = 10 dBm (both carriers)

P

1 dB gain compression

f= 800 MHz to 1800 MHz

G 15 18 –

∆G – 2.0 2.5

F – 4.0 5.0

RLIN – 13 9.5

RLOUT – 12 9.5

IP3 31 32.5 –

P1dB –19–

dBPower gain

dBmThird order intercept point

Semiconductor Group 3