Siemens CGY21 Datasheet

CGY 21
GaAs MMIC CGY 21
Two-stage monolithic microwave IC (MMIC amplifier)
All gold metallization
Chip fully passivated
Operating voltage range: 3 to 6 V
50 input/output; RLIN RLOUT > 10 dB
Gain: 21 dB at 500 MHz
Low noise figure: 3.9 dB at 500 MHz
Bandwidth: 2 GHz
Hermetically sealed package
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code
Circuit Diagram (Pin Configuration)
Package
1 RF output, 2 Interstage, 3 RF input
4 RF and DC
ground, case
V
S
V
S
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
CGY 21
Maximum Ratings Parameter Symbol Values Unit
Supply voltage, T Total power dissipation, T
C 80 ˚C VS 6V
C 50 ˚C Ptot 2W
Channel temperature Tch 150 ˚C Storage temperature range T
stg – 55 … + 150
Thermal Resistance
Channel - case RthchC 50 K/W Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to achieve guaranteed RF performance and stable operation conditions and provides adequate heat sink. Low parasitic capacitance of the bias network to port 2 gives optimum gain and flatness. Input and output connections must be DC isolated by coupling capacitors.
Semiconductor Group 2
Electrical Characteristics
A = 25 ˚C, VS = 4.5 V, RS = RL = 50 , unless otherwise specified,
at T (for application circuit see next page).
CGY 21
Parameter Symbol
G 19 21
f= 100 MHz to 900 MHz
Gain flatness
G 1.5 2
f= 100 MHz to 900 MHz
Noise figure
F 3.9 5.5
f= 100 MHz to 900 MHz
Input return loss
RLIN 12 9.5
f= 100 MHz to 900 MHz
Output return loss
RLOUT 12 9.5
f= 100 MHz to 900 MHz
IP3 31 32.5
two-tone intermodulation test
1= 806 MHz, f2= 810 MHz,
f
o = 10 dBm (both carriers)
P
UnitValues
min. typ. max.
mAOperating current Iop 160 200 dBPower gain
dBmThird order intercept point
1 dB gain compression
f= 100 MHz to 900 MHz
P1dB –19–
Semiconductor Group 3
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