Siemens CGY191 Datasheet

GaAs MMIC

l

Dual mode power amplifier for CDMA /TDMA portable cellular phones

l

29 dBm linear output power@ PAE=40% typ.

l

Fully integrated 2 stage amplifier

l

Power ramp control

l

Input matched to 50 ohms, simple output match

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

CGY 191

Type Marking Ordering code

Package

(taped)

CGY 191 CGY 191 Q62702G74 MW 16

Maximum ratings Characteristics Symbol max. Value Unit

Positive supply voltage V Supply current Channel temperature

Storage temperature Pulse peak power dissipation

Total power dissipation

(Ts ≤ 80 °C)

T T

P

Pulse

P

Ts: Temperature at soldering point

D

I

D Ch stg

tot

9V 4A

150 °C

-55...+150 °C tbd W

tbd W

Thermal Resistance Characteristics Symbol max. Value Unit

Channel-soldering point

Siemens Aktiengesellschaft 1 23.07.1998

Semiconductor Group 1 1998-11-01

HL HF PE GaAs 1/Fo

R

thChS

11 K/W

Functional Block Diagram:

Pin Configuration:

CGY 191

Pin # Configuration

1n. c. 2n. c. 3 Vcon Control voltage 4 Vneg Negative voltage 5n. c. 6 RF IN RF IN PCS Band 7n. c. 8 VD 1 Drain voltage preamplifier stage

9n. c. 10 n. c. 11 RF out RF out / drain voltage final stage 12 RF out RF out / drain voltage final stage 13 RF out RF out / drain voltage final stage 14 RF out RF out / drain voltage final stage 15 n. c. 16 n. c.

Siemens Aktiengesellschaft 2 23.07.1998

Semiconductor Group 2 1998-11-01

HL HF PE GaAs 1/Fo

CGY 191

Electrical Characteristics

(TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified )

Characteristics Symbol min typ max Unit

Frequency range Duty cycle TDMA output power

tON/t

f

P

OFF

1850 1910 MHz

100 %

29 dBm TDMA gain at max. output G 24 dB CDMA output power P 29 dBm CDMA gain at max. output G 24 dB Power ramping characte ristic

Full output power Pinch off

Adjacent Channel Power CDMA

1.25 MHz offset (PCS band)

1.98 MHz offset

Adjacent channel power TDMA

adjacent alternate 2nd alternate

V

contr

P

adj/Pmain

P

adj/Pmain

2.5

0.5

-45

-54

-28

-45

V

dBc @

30kHz

dBc @

30kHz

TDMA DC to RF efficiency @Padj=-26dBc

at max. output

CDMA DC to RF efficiency @Padj=-42dBc

at max. output at 10 dBm output power

Receive band noise power density

( 1930 to 1990 MHz )

PAE

P

RX

%

40

%

40

4

dBm/Hz

-145

DC supply voltage range VD 2.9 3.5 4.0 V Negative supply voltage range Vneg -5.0 -7.0 V Standby current @Vcon=0V I

Siemens Aktiengesellschaft 3 23.07.1998

Semiconductor Group 3 1998-11-01

HL HF PE GaAs 1/Fo

pwr dwn

500

µA

CGY 191

Characteristics Symbol min typ max Unit

Quiescent current 300 mA Current consumption at V Current consumption at V

Contr

NEG

Operating temperature range

I

Control

I

NEG

υ

Power on sequence:

1. connect negative voltage to PA

2. connect control voltage to PA

3. turn on Vd

4. turn on Pin To switch off the device please use reverse sequence.

Application Circuit:

IC1

2mA 2mA

-30 +85 °C

Vcon

RFin

Vd

Vaux

CLK

1

1 C

C10

100p

C1

10n

n

0

1

NC1

2

NC2

3

Vcon

4

Vneg

5

NC5

6

RFin

7

NC7

8

VD1

H

3

n

L

3

0

3

u

C

1

VD2/RFout4

VD2/RFout3 VD2/RFout2

VD2/RFout1

GND (backside MW16)

17

0

4

u

C

1

16

NC16

15

NC15

14

13

12 11

10

NC10

9

NC9

CGY191

0

5

u

C

1

C9

Q

8

H 9

p

3

100p

C

H

2

n

L

3

0

6

u

C

1

p

7

0

C

1

RFout

C15

2

n

1

3

C

C13

9

1

k

R

3

V2

1n0

R

2

0

R

8

6

1

L

BC848B

H

u 0

1

C14

1n0

3

V1

33n

1

BAS 40-04

2

Siemens Aktiengesellschaft 4 23.07.1998

Semiconductor Group 4 1998-11-01

HL HF PE GaAs 1/Fo