Siemens CGY181 Datasheet

GaAs MMIC CGY 181
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Preliminary Datasheet
*Power amplifier for PCN/PCS applications *Fully integrated 2 stage amplifier *Operating voltage range: 2.7 to 6 V *Overall power added efficiency 35 % *Input matched to 50 , simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(8-mm taped)
Package 1)
CGY 181 CGY 181 Q68000-A8883 MW 12
Maximum ratings
Characteristics Symbol max. Value Unit
Positive supply voltage V Negative supply voltage 2)V Supply current Channel temperature Storage temperature RF input power
D G
I
D
T
Ch
T
stg
P
in
9V
-8 V 2A
150 °C
-55...+150 °C 25 dBm
Total power dissipation
Ts: Temperature at soldering point
(Ts ≤ 81 °C)
P
tot
5W
Thermal Resistance
Channel-soldering point
1)
Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) V
= -8V only in combination with V
G
Siemens Aktiengesellschaft pg. 1/14 01.02.96
= 0V; VG = -6V while V
TR
R
thChS
TR
0V
14
K/W
HL EH PD 21
GaAs MMIC CGY 181
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Functional block diagramm:
VD1 (7) VD2 (11)VG (1)
VTR (2)
Pin (8)
connected (shut off mode).
Pin # Configuration
1 2
3,4,5,10
6,9
Control
Circuit
VG
VTR GND 2 GND 1
GND1 (6,9) GND2
Negative voltage at control circuit (-4V...-8V) Control voltage for transmit mode (0V) or receive mode (open) RF and DC ground of the 2nd stage RF and DC ground of the 1st stage
(3, 4, 5, 10)
Pout (11)
Short description of CGY181 operation:
A negative voltage between -4V to -6V (stabilization not necessary) has to be connected to the VG-pin, a positive supply voltage has to be applied to the VD-pins. The VTR-pin has to switched to 0V (GND) during transmit operation. The MMIC CGY181 is self-biased, the operating current is adjusted by the internal control circuit. In receive mode the VTR-pin is not
7
8 11 12
VD1
RFin
VD2,RFout
-
Positive drain voltage of the 1st stage RF input power Positive drain voltage of the 2nd stage, RF output power not connected
DC characteristics
Characteristics Symbol Conditions min typ max Unit
Drain current stage 1 stage 2 Drain current with
active current control Transconductance (stage 1 and 2) Pinch off voltage
IDSS1 IDSS2 ID
gfs1 gfs2 Vp
VD=3V, VG=0V, VTR n.c. 0.6 0.9 1.2 A
2.4 3.5 4.8 A
VD=3V, VG=-4V, VTR=0V 1.0 A
VD=3V, ID=350mA 0.28 0.32 - S VD=3V, ID=700mA 1.1 1.3 - S VD=3V, ID<500µA
-3.8 -2.8 -1.8 V
(all stages)
Siemens Aktiengesellschaft pg. 2/14 01.02.96
HL EH PD 21
GaAs MMIC CGY 181
________________________________________________________________________________________________________
Electrical characteristics
(TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to ground, unless otherwise specified)
Characteristics Symbol min typ max Unit
Supply current
Pin= 0 dBm
Negative supply current
I
DD
I
G
- 1.2 - A
-23mA
(normal operation)
Shut-off current
VTR n.c
.
Negative supply current
I
D
I
G
- 400 - µA
-10-
(shut off mode, VTR pin n.c.)
Small signal gain
G
- 20.5 - dB
Pin = -5dBm
Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, Pin = 16 dBm
Output Power
VD=5V , Pin = 16 dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
Harmonics (P VD=3.6V
(Pout Harmonics (P VD=5V
(Pout
=16dBm) 2f
=31.85dBm) 3f
=16dBm) 2f
=31.85dBm) 3f
0
0
P
P
G
G
η
η
14.5 15.5 - dB
17.5 18.5 - dB
0
0
30.5 31.5 - dBm
33.5 34.5 - dBm
-37-%
-35-%
-
-
-44.8
-70
-45.1
-75 Input VSWR VD=3.6V 1.9:1 Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 3.6V
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 5V
IP
IP
3
3
41 dBm
44 dBm
µA
-
dBc
­dBc
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
Siemens Aktiengesellschaft pg. 3/14 01.02.96
HL EH PD 21
GaAs MMIC CGY 181
________________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 1, VD=3V
1,2
High current Medium current Low current
1
0,8
0,6
0,4
0,2
ID [A]
0,8
0,7
0,6
0,5
0,4
ID [A]
0,3
0,2
-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0
VG [V]
DC-Output characteristics - typical values of stage 1
VG=-0.25 V
-0.50 V
-0.75 V
-1.00 V
-1.25 V
-1.50 V
Ptot=1.25 W
0
-1.75 V
-2.00 V
0,1
-2.25 V
0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6
VD [V]
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
Siemens Aktiengesellschaft pg. 4/14 01.02.96
HL EH PD 21
GaAs MMIC CGY 181
________________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 2, VD=3V
4,5
High current Medium current Low current
-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0
VG [V]
DC-Output characteristics - typical values of stage 2
4
3,5
ID [A]
3
2,5
2
1,5
1
0,5
0
3
2,5
VG=-0.50 V
-0.75 V
1,5
ID [A]
2
-1.00 V
-1.25 V
-1.50 V
1
0,5
0
00,511,522,533,544,555,56
VD [V]
-1.75 V
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
Ptot=3.75 W
-2.00 V
-2.25 V
-2.50 V
Siemens Aktiengesellschaft pg. 5/14 01.02.96
HL EH PD 21
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