Siemens CGY120 Datasheet

GaAs MMIC CGY 120

g

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D a t a s h e e t

*Monolithic microwave IC

(MMIC-Amplifier) for mobile communication
* Variable gain amplifier for GSM/PCN
applications
* Gain Control range over 50dB

*50Ω input and output matched
*Low power consumption
*Operating voltage range: 2.7 to 6 V
*Frequency range 800 MHz ... 2.5 GHz

RF-GND

Vd1

6

Vd2; RF-out

4

5

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type Marking Ordering code

1

RF-in; -V

Package 1)

(taped)

2

RF-GND

CGY 120 Y8 Q62702-G44 MW-6

Maximum ratings Symbol Unit

Drain voltage
Negative supply voltage
Channel temperature
Storage temperature range
Total power dissipation (TS < 84°C)

2)

V

D

Vg, Vcon

T

Ch

T

stg

P

tot

8V

-3 V

150 °C

-55...+150 °C
600 mW

3

Vcontrol

Thermal resistance

Channel-soldering point (GND)

Dimensions see chapter Package Outlines

1)

2) Please care for sufficient heat dissipation on the pcb!
Rev 2

Siemens Aktiengesellschaft pg. 1/7 17.09.96

R

thchS

< 110 K/W

HL EH PD21/Gü

GaAs MMIC CGY 120

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Electrical characteristics

T

= 25°C f = 900 MHz RS = RL = 50 Ω unless otherwise specified

A

Characteristics Symbol min typ max Unit

Power Gain

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Input return loss

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Output return loss

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Gain Control Range

Vcon=2 V ... -2V; Vd=3V; I=45mA

1dBm gain compression

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

RL

RL

P

G

out

dG

1

dB

-

-

-

-

-

-

22
24

14
15

11
11

50 55 - dB

14
21

Electrical characteristics

T

= 25°C f = 1800 MHz RS = RL = 50 Ω unless otherwise specified

A

dB

-

­dB

-

­dB

-

-

dBm

Characteristics Symbol min typ max Unit

Power Gain

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Input return loss

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Output return loss

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

Gain Control Range

Vcon=2 V ... -2V; Vd=3V; I=45mA

1dBm gain compression

Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V

RL

RL

P

G

out

dG

1

dB

dB

-

-

20
22

-

­dB

-

-

10
10

-

­dB

-

-

8
8

-

-

50 55 - dB

dBm
14
20

Siemens Aktiengesellschaft pg. 2/7 17.09.96

HL EH PD21/Gü

GaAs MMIC CGY 120

A

AA

A

AA

A

AA

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AA

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A

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Application Circuit

f=800MHz to 2GHz

Frequency 900 MHz 1.8 GHz

L1 27 nH 27 nH

L2 22 nH 22 nH
C1 12 pF 12 pF
C2 12 pF 12 pF
C3 680 pF 680 pF
C4 22 pF 22 pF
C5 680 pF

R1 470 Ohm 470 Ohm
R2 510 Ohm 510 Ohm

C1 , C2 Siemens B37490-K5120-J62 R1 Siemens B54102-A1471-J60 L1 Coilcraft 0805CS-270XMBC
C4 Siemens B37940-K5220-J62 R2 Siemens B53102-A1511-J60 L2 Coilcraft 0805CS-220XMBC
C3 , C5 Siemens B37940-K5681-J62
For optimized device performance, Vg has to be adapted (Vg

≈ -1V...0V) to I ≈ 45mA at Vd-supply

under condition Vcontrol=+2V.

Gain vs. Vcontrol

Operating Conditions : Vd=3V, Id=45mA, Pin=-20dBm

30

20

10

0

-10

Gain [dB]

-20

-30

-40

900MHz

1.8GHz

-50

-2 -1,5 -1 -0,5 0 0,5 1 1,5 2

Vcontrol [V]

Siemens Aktiengesellschaft pg. 3/7 17.09.96

HL EH PD21/Gü