Siemens CGY0819 Datasheet

GaAs MMIC

l

Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones

l

Dual band operation

l

31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ.

l

Two independent amplifier chains

l

Power ramp control

l

Input matched to 50 ohms, simple output match on PCB

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

CGY 0819

Type Marking Ordering code

Package

(taped)

CGY 0819 CGY 0819 Q62702G0076 MW 16

Maximum ratings Characteristics Symbol max. Value Unit

Positive supply voltage V Supply current Channel temperature

Storage temperature Pulse peak power dissipation

T T

P

Pulse

duty cycle 12.5%, ton=0.577ms

Total power dissipation

(Ts ≤ 80 °C)

P

Ts: Temperature at soldering point

D

I

D Ch stg

tot

9V 4A

150 °C

-55...+150 °C tbd W

tbd W

Thermal Resistance Characteristics Symbol max. Value Unit

Channel-soldering point

Siemens Aktiengesellschaft 1 16.09.98

Semiconductor Group 1 1998-11-01

R

thChS

11 K/W

HL HF PE GaAs 1 / Fo

Functional Block Diagram:

CGY 0819

Pin Configuration:

Pin # Name Configuration

1 VD Cell Drain voltage cell preamplifier stage 2 RF IN Cell RF IN Cell Band 3 Vneg Negative voltage 4 Vcon cell Control voltage cell. PA 5 Vcon PCS Control voltage PCS PA 6 Vneg Negative voltage 7 RF IN PCS RF IN PCS Band 8 VD PCS Drain voltage PCS preamplifier stage

9 RF out PCS RF out PCS 10 RF out PCS RF out PCS 11 RF out PCS RF out PCS 12 RF out PCS RF out PCS 13 GND RF Ground 14 RF out Cell RF out Cell 15 RF out Cell RF out Cell 16 RF out Cell RF out Cell

Siemens Aktiengesellschaft 2 16.09.98

Semiconductor Group 2 1998-11-01

HL HF PE GaAs 1 / Fo

CGY 0819

Electrical Characteristics

(TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified )

Characteristics Symbol min typ max Unit

Frequency range Cellular frequency band PCS frequency band

Duty cycle AMPS output power TDMA cellular output power AMPS gain at max. output TDMA cellular gain at max. output TDMA PCS output power

tON/t

P

P G G P

f

OFF

824

1850

MHz

849

1910

100 %

31,5 dBm

30 dBm 24 dB 27 dB

29 dBm TDMA PCS gain at max. output G 24 dB CDMA cellular output power P 28 dBm CDMA cellular gain at max. out put G 28 dB CDMA PCS output power P 29 dBm CDMA PCS gain at max. output G 24 dB Power ramping characte ristic

Full output power Pinch off

V

contr

V

2.5

0.5

Adjacent Channel Power CDMA 900kHz offset (cellular band)

1.25 MHz offset (PCS band)

1.98 MHz offset Adjacent channel power TDMA

adjacent alternate

P

adj/Pmain

P

adj/Pmain

-45

–45

-54

-28

–45

-45

dBc @

30kHz

dBc @

30kHz

2nd alternate AMPS efficiency PAE 55 % TDMA DC to RF efficiency

PAE

% @Padj=-26dBc at max. output Cellular Band: PCS Band

CDMA DC to RF efficiency

PAE

40 40

% @Padj=-42dBc at max. output Cellular Band PCS Band

35 40

at Pout=10 dBm ( Iq set to 100mA )

Siemens Aktiengesellschaft 3 16.09.98

Semiconductor Group 3 1998-11-01

8

HL HF PE GaAs 1 / Fo

CGY 0819

Characteristics Symbol min typ max Unit

Receive band noise power density Cell band ( 869 to 894 MHz ) PCS band ( 1930 to 1990 MHz )

P

RX

dBm/Hz

-137

-145 DC supply voltage range VD 3 3.5 4.0 V Negative supply voltage range Vneg -5.0 -7 V Standby current @Vcon=0V I

pwr dwn

Quiescent current I Current consumption at V Current consumption at V

Contr NEG

I

Control

I

Operating temperature range

Q

NEG

υ

-30 +85 °C

500

µA

300 mA

2mA 2mA

Power on sequence:

1. connect negative voltage to PA

2. connect control voltage to PA

3. turn on Vd

4. turn on Pin To switch off the device please use reverse sequence.

Siemens Aktiengesellschaft 4 16.09.98

Semiconductor Group 4 1998-11-01

HL HF PE GaAs 1 / Fo

Application Circuit:

S

RFin Cell

Vcon Cell

Vcon PCS

RFin PCS

Vd

Vsw

Vaux

CLK

C7

R3

68R

100p

1

2 C

4 R

C22

1n0

8 C

BCP 72

0

k

1

n

3

2 R

1 R

V3

CGY 0819

p

3

0

C

0

1

H

n

3

C2

9

1

p

L4

C

3

8n2

n

0

1

n

9

0

C

1

100p

C10

1 2

3

4 5

6 7

8

100p

C11

2

1 C

IC1

RFout3Cell

VD1Cell RFinCell

RFout2Cell

VnegCell

RFout1Cell

VconCell

RFout4PCS

VconPCS

RFout3PCS

VnegPCS

RFout2PCS

RFinPCS

RFout1PCS

VD1PCS

GND (backside MW16)

17

3

0

u

1

0

1

u

1

C

16 15

14

13

GND

12

11 10

9

CGY0819

4

1 C

5

0

1

u

1

C

10n C19

10n

H

1

u

L

9

k

3

V1

0

1

C23

1n0

BC848B

R

0

8

6

3

V2

C20

33n

1

BAS 40-04

2

L

3

C6

Q

4

H

C

6

p

5

7

H

2

n

L

3

p

6

0

u

1

0

1

0

C

1

1 C

Q

100p

5

H

C

p

0

C18

1

Q

100p

H 9

p

3

RFout Cel

RFout PC

Evaluation Board Parts List Part Type Position Description Manufacturer Part Number

Capacitor C1 3.9pF 0403 Siemens Capacitor C2, C3, C6, C7,

100pF 0402 Siemens

C10, C16, C18 Capacitor C4 5.6pF 0603 HQ AVX 06035J5R6GBT Capacitor C5 10pF 0603 HQ AVX 06035J100GBT Capacitor C8, C9, C11,

10nF0402 Siemens

C19 Capacitor C12, C13, C14,

1u0 1206

C15 Capacitor C17 3.9pF 0603 HQ AVX 06035J3R9BBT Capacitor C20, C21 33nF 0402 Siemens Capacitor C22, C23 1nF 0402 Siemens

Siemens Aktiengesellschaft 5 16.09.98

Semiconductor Group 5 1998-11-01

HL HF PE GaAs 1 / Fo

CGY 0819

Part Type Position Description Manufacturer Part Number

Inductor L1 10uH Siemens Inductor L2, L3 Air Coil 33nH H. David GmbH PN/BV 1250 Inductor L4 8.2nH 0603 TOKO Resistor R1 680 Ohm 0402 Resistor R2 3.9k 0402 Resistor R3 68 Ohm 0805 Resistor R4 1.0k 0402 Transistor V1 BC848B Siemens Diode V2 BAS40-04W Siemens Transistor V3 BCP72 Siemens IC IC1 CGY0819 Siemens Substrate FR4,

Siemens

h=0.2mm,εr=4.5

Evaluation Board:

Vcon Cell

n

o

c

Dual Band PA

V

l

l e C

n

i F R

S C P n

i F R

Vcon PCS

C1

C2

9 1

4

C

L

C9

C8

7 C

C11

9

4

1

R

8 0 Y G C

n

o

c V

V3

3 R

d

w

s

V

Vsw

Vaux

Vd

Siemens

3 C

IC1

C16

C10

C12

C13

C23

0

2

2 C

V

Vaux

Cellular

6 C

L3

C5

4 C

8

7

1

C

L2

C14 C15

1

R

V

1 L

2 2

PCS

C

R2

1

CLK

2 C

l

l e C t u o F R

S C P t u o F R

CLK

Siemens Aktiengesellschaft 6 16.09.98

Semiconductor Group 6 1998-11-01

HL HF PE GaAs 1 / Fo